JPS5789267A - Thin film solar cell - Google Patents
Thin film solar cellInfo
- Publication number
- JPS5789267A JPS5789267A JP55166195A JP16619580A JPS5789267A JP S5789267 A JPS5789267 A JP S5789267A JP 55166195 A JP55166195 A JP 55166195A JP 16619580 A JP16619580 A JP 16619580A JP S5789267 A JPS5789267 A JP S5789267A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- solar cell
- film solar
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910003069 TeO2 Inorganic materials 0.000 abstract 1
- 229910004273 TeO3 Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To increase protective effect of a semiconductor thin film against temperature and adhesiveness of the film to a substrate by using at least one of In2 Te O6-x and In2 Te1-x Rex O6 as a material for a thin film solar cell. CONSTITUTION:In2O3, TeO2, In, Te are weighed to make a required composition and blended and sealed in a Pt tube to be heated for 20 hours at 1,100 deg.C at about 60K bar. Then it is gradually cooled to get In2 Te O6-x. Similarly, In2TeO6-x is obtained from the mixture of O3, TeO3. One of these is used to form a film of about 2,000Angstrom thickness on a glass substrate by sputtering method. These electrodes have a high reliability with 80% transparency and resistance is 2-8X10<-2>OMEGAcm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166195A JPS5789267A (en) | 1980-11-26 | 1980-11-26 | Thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166195A JPS5789267A (en) | 1980-11-26 | 1980-11-26 | Thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5789267A true JPS5789267A (en) | 1982-06-03 |
Family
ID=15826842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55166195A Pending JPS5789267A (en) | 1980-11-26 | 1980-11-26 | Thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5789267A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167072A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Series-connected type thin film solar battery |
-
1980
- 1980-11-26 JP JP55166195A patent/JPS5789267A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167072A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Series-connected type thin film solar battery |
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