JPS5787130A - Exposure device of charged particle beam - Google Patents

Exposure device of charged particle beam

Info

Publication number
JPS5787130A
JPS5787130A JP16295580A JP16295580A JPS5787130A JP S5787130 A JPS5787130 A JP S5787130A JP 16295580 A JP16295580 A JP 16295580A JP 16295580 A JP16295580 A JP 16295580A JP S5787130 A JPS5787130 A JP S5787130A
Authority
JP
Japan
Prior art keywords
image
particle beam
square
charged particle
squares
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16295580A
Other languages
Japanese (ja)
Inventor
Hisaaki Aizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16295580A priority Critical patent/JPS5787130A/en
Publication of JPS5787130A publication Critical patent/JPS5787130A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To expose figures in a short time including tilted figures by tilting two beam passing squares at 45 deg. making the ratio of a side of the each square 1:2 at the position of samples. CONSTITUTION:The image I1 of the first aperture and the image I2 of the second aperture are squares having a side of the length l1 and l2 respectively and each crossed at 45 deg.. When the center of the image I1 and I2 fit together, the square S2 of the image I2 is equal to the cross-sectional squares of a charged particle beam. If the center of the image I1 moves in parallel by l1/2 along each side of l1, the cross-sectional square of the formed charged particle beam is S2/2. Generally, the particle beam with the cross-sectional square S2/2N<-1> is obtained when the image I1 moves against the image I2 in parallel along the side l1 and four kinds each of the particle beam of S2/2<2>N are obtained when the I1 moves along the side l2. By combining all the formed particle beams, rectangular figures of the length and the width of integral multiple of l2/2N<-1> with the width of a tilted part l1/2N can be exposed uniformly thereby saving processing time.
JP16295580A 1980-11-19 1980-11-19 Exposure device of charged particle beam Pending JPS5787130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16295580A JPS5787130A (en) 1980-11-19 1980-11-19 Exposure device of charged particle beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16295580A JPS5787130A (en) 1980-11-19 1980-11-19 Exposure device of charged particle beam

Publications (1)

Publication Number Publication Date
JPS5787130A true JPS5787130A (en) 1982-05-31

Family

ID=15764441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16295580A Pending JPS5787130A (en) 1980-11-19 1980-11-19 Exposure device of charged particle beam

Country Status (1)

Country Link
JP (1) JPS5787130A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124129A (en) * 1984-11-21 1986-06-11 Hitachi Ltd Electron beam exposure device
JPS61260628A (en) * 1985-05-15 1986-11-18 Matsushita Electronics Corp Electron beam exposure device
JPS6210729U (en) * 1985-07-05 1987-01-22

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124129A (en) * 1984-11-21 1986-06-11 Hitachi Ltd Electron beam exposure device
JPS61260628A (en) * 1985-05-15 1986-11-18 Matsushita Electronics Corp Electron beam exposure device
JPS6210729U (en) * 1985-07-05 1987-01-22

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