JPS61260628A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS61260628A
JPS61260628A JP10303085A JP10303085A JPS61260628A JP S61260628 A JPS61260628 A JP S61260628A JP 10303085 A JP10303085 A JP 10303085A JP 10303085 A JP10303085 A JP 10303085A JP S61260628 A JPS61260628 A JP S61260628A
Authority
JP
Japan
Prior art keywords
electron beam
aperture
beam exposure
apertures
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10303085A
Other languages
Japanese (ja)
Inventor
Masashi Asaumi
浅海　政司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP10303085A priority Critical patent/JPS61260628A/en
Publication of JPS61260628A publication Critical patent/JPS61260628A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To enable high-speed and high-precision electron beam exposure using the title device by a method wherein the device is provided with an electron gun, plural electromagnetic lenses, two pieces of square forming apertures and a deflecting electrode to be positioned between the two apertures. CONSTITUTION:An electron beam 4, which is emitted from the electron gun and is narrowed by the electromagnetic lenses, is irradiated on a first forming aperture 1 and the electron beam 4 is formed in a square and is projected on a second forming aperture 3. The projection position of a first aperture image 5 on the second forming aperture 3 can be varied by a deflecting electron beam 6 having oblique lien parts of the controlled dimension is formed. By using the four corners of the second forming aperture 3 properly, four kinds of beams in a configuration of a right-angled triangle can be formed. The pattern parts of a circuit pattern, which are parallel to the axes of coordinates, are exposed using the fixed beam to be constituted of the four sides parallel to the axes of coordinates and the oblique line parts of the circuit pattern are exposed using the beams in the configuration of a right-angled triangle. By this way, a high-precision and high-speed electron beam exposure can be performed.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、超高速・高精度露光を可能にする電子線露光
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an electron beam exposure apparatus that enables ultra-high-speed and high-precision exposure.

従来の技術 一般に集積回路等を作製するための電子線露光装置では
、回路パターンを、単位となる正方形で構成し、この単
位に合わせて矩形断面の電子ビームの形状および大きさ
を固定し、塗りつぶし走査の速度を著しく高速にできる
装置、いわゆる固定矩形ビーム型電子ビーム露光装置が
用いられている。従来のこの種の装置では、第３図に示
すように、電子ビーム成形用アパーチャを１個有し、単
位となる矩形ビームをアパーチャにより形成し、集束レ
ンズによって試料面上に集束させている。Conventional technology Generally, in an electron beam exposure apparatus for manufacturing integrated circuits, etc., a circuit pattern is composed of a square unit, and the shape and size of an electron beam with a rectangular cross section is fixed to match the unit, and the circuit pattern is filled. A so-called fixed rectangular beam type electron beam exposure apparatus is used which can significantly increase the scanning speed. As shown in FIG. 3, this type of conventional apparatus has one aperture for shaping an electron beam, and a unit rectangular beam is formed by the aperture and focused onto the sample surface by a focusing lens.

発明が解決しようとする問題点 このような従来の装置では、アパーチャの形状は、座標
軸に平行な４辺で構成される矩形のみであるため、成形
された電子ビームの形状は、やはり座標軸に平行な４辺
で構成される矩形に限られる。したがって斜線パターン
を形成することができない。それでパターンの近似を高
めるためには、パターンの細分化を上げたり、多重露光
を利用しなければならないので露光のデータ量が膨大な
ものになり、露光時間が長くなるという問題点かある。Problems to be Solved by the Invention In such conventional devices, the shape of the aperture is only a rectangle with four sides parallel to the coordinate axes, so the shape of the shaped electron beam is also parallel to the coordinate axes. It is limited to rectangles with four sides. Therefore, a diagonal line pattern cannot be formed. Therefore, in order to improve the approximation of the pattern, it is necessary to increase the subdivision of the pattern or use multiple exposure, which results in a huge amount of exposure data and a problem that the exposure time becomes long.

本発明はこの問題点を除去するために行なわれたもので
あり、超高速・高精度露光を可能にする電子線露光装置
を提供することを目的としている。The present invention has been made to eliminate this problem, and an object of the present invention is to provide an electron beam exposure apparatus that enables ultra-high-speed and high-precision exposure.

問題点を解決するための手段 本発明は、上記目的を達成するためのものであり、−上
記アパーチャに対して９０度未満（ただし０度をのぞく
）回転した位置に１個のアパーチャを付設することによ
って、斜線部を有する形状の電子ビームを成形すること
を特徴としている。Means for Solving the Problems The present invention is intended to achieve the above objects, - one aperture is attached at a position rotated by less than 90 degrees (excluding 0 degrees) with respect to the above aperture; This is characterized by shaping an electron beam into a shape having a diagonal line.

作用 本発明による電子線露光装置では、上記のごとき形状の
電子ビームを成形することにより、斜線部のパターンエ
ツジが階段状にならず、また、露光データ量も少なくて
すむので、精度が高く、かつ高速の塗りつぶし走査が行
なえる。Function: In the electron beam exposure apparatus according to the present invention, by forming the electron beam in the above-mentioned shape, the pattern edges in the diagonal areas do not become step-like, and the amount of exposure data can be small, resulting in high accuracy. In addition, high-speed fill-in scanning can be performed.

実施例 第１図ａに、本発明の一実施例の電子線露光装置の主要
部を電磁レンズを省略して示し、同図すに本装置による
斜線パターン成形のようすを模式電子銃から発射され電
磁レンズで絞られた′［ｔｆ−ビーム４は、第１成形ア
パーチヤ１に照射され、正方形に成形され第２アパーチ
ヤ３に投影される。Embodiment FIG. 1a shows the main parts of an electron beam exposure apparatus according to an embodiment of the present invention, with the electromagnetic lens omitted. The '[tf-beam 4 , which has been focused by an electromagnetic lens, is irradiated onto the first shaping aperture 1 , shaped into a square, and projected onto the second aperture 3 .

この時、第１．第２アパーチャ間に設けられた偏向電極
２により、電子ビーム（第１アパーチヤ像６）の第２ア
パーチヤ上における投影位置が可変となり、寸法制御さ
れた斜線部を有する成形電子ビーム６が成形される。ア
パーチャの４つの隅を使いわけることにより、４種類の
直角三角形の形状が形成できる。At this time, the first. By the deflection electrode 2 provided between the second apertures, the projection position of the electron beam (first aperture image 6) on the second aperture can be varied, and a shaped electron beam 6 having a dimensionally controlled diagonal area is formed. . By properly using the four corners of the aperture, four types of right triangular shapes can be formed.

また、座標軸に平行な四辺で構成されるアパーチャの一
辺の長さをａとした時、他方の４６度回転したアパーチ
ャの一辺の長さを、／’Ｅｒａより大きくすると、第１
．第２アパーチャ間の偏向電極の電圧がＯＶＯ時、第１
アパーチヤにより成形された電子ビームがそのまま試料
面に達し、固定矩形ビームとして使用することができる
。この座標軸に平行な四辺で構成される固定ビームを用
いて、回路パターンの座標軸に平行な図形部分を露光し
６へ一／ でゆく。そして、斜線部分は、上記した直角三角形のビ
ームで露光してゆく。Also, when the length of one side of the aperture consisting of four sides parallel to the coordinate axis is a, if the length of one side of the other aperture rotated by 46 degrees is larger than /'Era, then the first
．． When the voltage of the deflection electrode between the second aperture is OVO, the first
The electron beam shaped by the aperture reaches the sample surface as it is, and can be used as a fixed rectangular beam. Using a fixed beam composed of four sides parallel to this coordinate axis, a figure portion parallel to the coordinate axis of the circuit pattern is exposed and the process proceeds to step 6. Then, the shaded area is exposed with the above-mentioned right triangular beam.

第２図に、本発明によるパターンの露光例を示す。三角
形と正方形を組み合わせて行くことにより、高精度な露
光が可能となり、しかも斜線パターンの分割を必要最小
限に押えることにより、露光データの量を少なくし、露
光の高速化がはかれる。FIG. 2 shows an example of pattern exposure according to the present invention. By combining triangles and squares, highly accurate exposure is possible, and by keeping the division of the diagonal line pattern to the minimum necessary, the amount of exposure data can be reduced and exposure speed can be increased.

発明の効果 以上述べてきたように、本発明によれば、斜線パターン
を有する回路パターンに対して、直角三角形のビームと
、正方形のビームとを組み合わせて露光することにより
高精度かつ高速な電子ビーム露光が可能となる。Effects of the Invention As described above, according to the present invention, a circuit pattern having a diagonal line pattern is exposed with a combination of a right triangular beam and a square beam, thereby producing a highly accurate and high-speed electron beam. Exposure becomes possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図ａは本発明の一実施例の電子線露光装置の主要部
の模式断面図、第１図すは本発明の一実施例の電子線露
光装置による電子ビーム成形を模式的に示す図、第２図
は本発明による斜線パターン露光例の平面図、第３図は
従来の電子線露光装置の断面図である。 １・・・・・第１アパーチヤ、２・・・・偏向電極、３
・・・・・第２アパーチヤ、４・・・・電子ビーム、６
・・・・第１アパーチヤ像、６・・・・・・成形電子ビ
ーム。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名第１
図 （す （ｂ） ７つ畳 第３図 く　　　　ン 」ト ｌ／FIG. 1a is a schematic sectional view of the main parts of an electron beam exposure apparatus according to an embodiment of the present invention, and FIG. 1A is a diagram schematically showing electron beam shaping by the electron beam exposure apparatus according to an embodiment of the present invention. 2 is a plan view of an example of diagonal line pattern exposure according to the present invention, and FIG. 3 is a sectional view of a conventional electron beam exposure apparatus. 1...First aperture, 2... Deflection electrode, 3
...Second aperture, 4...Electron beam, 6
...First aperture image, 6... Shaped electron beam. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure (b) Seven tatami mats Figure 3

Claims (2)

【特許請求の範囲】[Claims] （１）電子銃と、複数の電磁レンズと、２個の正方形の
成形アパーチャと、上記両アパーチャ間に位置する偏向
電極とを備え、上記一方のアパーチャの一辺が前記偏向
電極による電子線ビームの走査方向と平行であり、上記
他方のアパーチャの一辺が上記一方のアパーチャに対し
て９０度未満（ただし０度をのぞく）の回転をしている
電子線露光装置。(1) Equipped with an electron gun, a plurality of electromagnetic lenses, two square shaped apertures, and a deflection electrode located between the two apertures, one side of one of the apertures is configured to deflect the electron beam by the deflection electrode. The electron beam exposure apparatus is parallel to the scanning direction, and one side of the other aperture is rotated by less than 90 degrees (excluding 0 degrees) with respect to the one aperture. （２）４５度回転したアパーチャの一辺が、他方のアパ
ーチャの対角線長より、少なくとも大とした特許請求の
範囲第１項記載の電子線露光装置。(2) The electron beam exposure apparatus according to claim 1, wherein one side of the aperture rotated by 45 degrees is at least larger than the diagonal length of the other aperture.
JP10303085A 1985-05-15 1985-05-15 Electron beam exposure device Pending JPS61260628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10303085A JPS61260628A (en) 1985-05-15 1985-05-15 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10303085A JPS61260628A (en) 1985-05-15 1985-05-15 Electron beam exposure device

Publications (1)

Publication Number Publication Date
JPS61260628A true JPS61260628A (en) 1986-11-18

Family

ID=14343251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10303085A Pending JPS61260628A (en) 1985-05-15 1985-05-15 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS61260628A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787130A (en) * 1980-11-19 1982-05-31 Nec Corp Exposure device of charged particle beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787130A (en) * 1980-11-19 1982-05-31 Nec Corp Exposure device of charged particle beam

Similar Documents

Publication Publication Date Title
JPH0793253B2 (en) Charged beam exposure device
GB1567187A (en) Particle projection method and apparatus
US4136285A (en) Method for irradiating a specimen by corpuscular-beam radiation
US5153441A (en) Electron-beam exposure apparatus
US4167676A (en) Variable-spot scanning in an electron beam exposure system
US4263514A (en) Electron beam system
JPS61260628A (en) Electron beam exposure device
JPH0697648B2 (en) Electron beam exposure system
JP2000340492A (en) Mask for electron beam exposure and manufacture of semiconductor device using the same
JPH11329948A (en) Electron beam transfer method
JP2898726B2 (en) Charged particle beam exposure method
JPS61263121A (en) Electron beam exposure equipment
JPS62152125A (en) Charged beam exposure equipment
JPS6229893B2 (en)
JP3086238B2 (en) Charged particle beam exposure system
JP3455103B2 (en) Pattern drawing equipment
JP3104814B2 (en) Charged particle beam drawing equipment
JPS5928982B2 (en) Printing device
JPH065720B2 (en) Pattern drawing method of light receiving part of solid-state imaging device
JP2701422B2 (en) Pattern transfer method and apparatus and mask
JPS5941831A (en) Method for electron-beam drawing
JPS59119831A (en) Method for splitting of pattern in charged particle beam exposure
JPS62104031A (en) Electron beam exposure method
JPH06163383A (en) Drawing method by charged particle beam
JPH06140309A (en) Method for electron beam expoure