JPS5785238A - Reaction tube - Google Patents

Reaction tube

Info

Publication number
JPS5785238A
JPS5785238A JP16162780A JP16162780A JPS5785238A JP S5785238 A JPS5785238 A JP S5785238A JP 16162780 A JP16162780 A JP 16162780A JP 16162780 A JP16162780 A JP 16162780A JP S5785238 A JPS5785238 A JP S5785238A
Authority
JP
Japan
Prior art keywords
reaction tube
boat
pulley
exterior
inner reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16162780A
Other languages
English (en)
Inventor
Wakao Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16162780A priority Critical patent/JPS5785238A/ja
Publication of JPS5785238A publication Critical patent/JPS5785238A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP16162780A 1980-11-17 1980-11-17 Reaction tube Pending JPS5785238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16162780A JPS5785238A (en) 1980-11-17 1980-11-17 Reaction tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16162780A JPS5785238A (en) 1980-11-17 1980-11-17 Reaction tube

Publications (1)

Publication Number Publication Date
JPS5785238A true JPS5785238A (en) 1982-05-27

Family

ID=15738772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16162780A Pending JPS5785238A (en) 1980-11-17 1980-11-17 Reaction tube

Country Status (1)

Country Link
JP (1) JPS5785238A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137317A (ja) * 1988-11-18 1990-05-25 Nec Corp 抵抗線加熱炉

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53148275A (en) * 1977-05-30 1978-12-23 Toshiba Ceramics Co Method of treating silicon wafer
JPS55110033A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Epitaxial layer-growing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53148275A (en) * 1977-05-30 1978-12-23 Toshiba Ceramics Co Method of treating silicon wafer
JPS55110033A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Epitaxial layer-growing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137317A (ja) * 1988-11-18 1990-05-25 Nec Corp 抵抗線加熱炉

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