JPS5379459A - Doping prodess device - Google Patents

Doping prodess device

Info

Publication number
JPS5379459A
JPS5379459A JP15514076A JP15514076A JPS5379459A JP S5379459 A JPS5379459 A JP S5379459A JP 15514076 A JP15514076 A JP 15514076A JP 15514076 A JP15514076 A JP 15514076A JP S5379459 A JPS5379459 A JP S5379459A
Authority
JP
Japan
Prior art keywords
doping
prodess
dopant
squeeze
coming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15514076A
Other languages
Japanese (ja)
Inventor
Kenya Nakai
Sumio Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15514076A priority Critical patent/JPS5379459A/en
Publication of JPS5379459A publication Critical patent/JPS5379459A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To perform an accurate doping as desired by having one coming and going for the doping gas pipe within the heating chamber and making pass the dopant through the low temperature part to squeeze the extra amount of the dopant.
COPYRIGHT: (C)1978,JPO&Japio
JP15514076A 1976-12-24 1976-12-24 Doping prodess device Pending JPS5379459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15514076A JPS5379459A (en) 1976-12-24 1976-12-24 Doping prodess device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15514076A JPS5379459A (en) 1976-12-24 1976-12-24 Doping prodess device

Publications (1)

Publication Number Publication Date
JPS5379459A true JPS5379459A (en) 1978-07-13

Family

ID=15599413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15514076A Pending JPS5379459A (en) 1976-12-24 1976-12-24 Doping prodess device

Country Status (1)

Country Link
JP (1) JPS5379459A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63193897A (en) * 1987-01-20 1988-08-11 アメリカン　テレフォン　アンド　テレグラフ　カムパニー Vapor phase epitaxial growth method of 3-v compound semiconductor using indium, to which iron is doped, as base
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63193897A (en) * 1987-01-20 1988-08-11 アメリカン　テレフォン　アンド　テレグラフ　カムパニー Vapor phase epitaxial growth method of 3-v compound semiconductor using indium, to which iron is doped, as base
JPH0543680B2 (en) * 1987-01-20 1993-07-02 American Telephone & Telegraph
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon

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