JPS578175A - Multilayer interconnection structure for crossover and manufacture thereof - Google Patents
Multilayer interconnection structure for crossover and manufacture thereofInfo
- Publication number
- JPS578175A JPS578175A JP8319580A JP8319580A JPS578175A JP S578175 A JPS578175 A JP S578175A JP 8319580 A JP8319580 A JP 8319580A JP 8319580 A JP8319580 A JP 8319580A JP S578175 A JPS578175 A JP S578175A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- conductive
- several
- multilayer interconnection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Abstract
PURPOSE:To provide a multilayer interconnection structure free from poor connector by arranging several first conductor layers, an insulating layer partially provided with several openings, an oxidized metal thin film layer, a conductive thick film electrode and several second conductive layers. CONSTITUTION:A paste (Au or the like) is printed on a dielectric substrate 101 such as alumina ceramics directly or through a dielectric glazed layer 102 (crystalized glass or the like) and baked to form several first conductive layers 106, which is covered with a glass material better in the insulation to form an insulating layer 107 for multilayer interconnection. Openings equal in the number to heating resistors 103 are provided on the layer 107 to connecting the first conductive layer 106 and the second conductive layer 104. Then, a metal thin film 108 made of Ta or the like is formed thereon. A thick film semiconductor electrode 109 is printed on the thin film 108 on the opening and dried. The metal thin film 108 is oxidized while an electrode 109 is baked. A second conductive layer 104 is provided thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8319580A JPS578175A (en) | 1980-06-19 | 1980-06-19 | Multilayer interconnection structure for crossover and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8319580A JPS578175A (en) | 1980-06-19 | 1980-06-19 | Multilayer interconnection structure for crossover and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS578175A true JPS578175A (en) | 1982-01-16 |
JPH0147036B2 JPH0147036B2 (en) | 1989-10-12 |
Family
ID=13795542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8319580A Granted JPS578175A (en) | 1980-06-19 | 1980-06-19 | Multilayer interconnection structure for crossover and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS578175A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4854936A (en) * | 1986-07-29 | 1989-08-08 | Tdk Corporation | Semiconductive ceramic composition and semiconductive ceramic capacitor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5053863A (en) * | 1973-09-12 | 1975-05-13 | ||
JPS5422576A (en) * | 1977-07-21 | 1979-02-20 | Nippon Electric Co | Method of manufacturing substrate for integrated circuit |
JPS5456163A (en) * | 1977-10-11 | 1979-05-04 | Fujitsu Ltd | Preparation of ceramic multilayer circuit substrate |
-
1980
- 1980-06-19 JP JP8319580A patent/JPS578175A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5053863A (en) * | 1973-09-12 | 1975-05-13 | ||
JPS5422576A (en) * | 1977-07-21 | 1979-02-20 | Nippon Electric Co | Method of manufacturing substrate for integrated circuit |
JPS5456163A (en) * | 1977-10-11 | 1979-05-04 | Fujitsu Ltd | Preparation of ceramic multilayer circuit substrate |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4854936A (en) * | 1986-07-29 | 1989-08-08 | Tdk Corporation | Semiconductive ceramic composition and semiconductive ceramic capacitor |
Also Published As
Publication number | Publication date |
---|---|
JPH0147036B2 (en) | 1989-10-12 |
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