JPS5772324A - Reticle amendment - Google Patents

Reticle amendment

Info

Publication number
JPS5772324A
JPS5772324A JP14858180A JP14858180A JPS5772324A JP S5772324 A JPS5772324 A JP S5772324A JP 14858180 A JP14858180 A JP 14858180A JP 14858180 A JP14858180 A JP 14858180A JP S5772324 A JPS5772324 A JP S5772324A
Authority
JP
Japan
Prior art keywords
reticle
pattern
data
amendment
missing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14858180A
Other languages
Japanese (ja)
Inventor
Muneo Hokozaki
Toshio Murata
Tadashi Shigemasa
Hideaki Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14858180A priority Critical patent/JPS5772324A/en
Publication of JPS5772324A publication Critical patent/JPS5772324A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To make reticle amendment easier by a method wherein a reticle pattern is displayed on a CRT and a coordinates position can be instructed. CONSTITUTION:A plurality of enlarged drawings for checking which are discharged from a plotter are piled up for every process and checked. If a missing pattern is detected, data for a pattern generator (reticle pattern data) of that process drawing is put into a central processing unit 12 from a magnetic tape 11. Then this reticle pattern data is displayed on a CRT13 and the coordinates of the missing pattern is instructed by a tablet pen on the CRT and these data are put into the central processing unit 12 and stored in a magnetic disc 14. Then the reticle which contains the missing pattern is coated with a photo resist film and mounted on a stage of an exposure equipment 15 and the position of the part to be amended is determined automatically by the instruction of the unit 12 and the optical amendment process is carried out.
JP14858180A 1980-10-23 1980-10-23 Reticle amendment Pending JPS5772324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14858180A JPS5772324A (en) 1980-10-23 1980-10-23 Reticle amendment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14858180A JPS5772324A (en) 1980-10-23 1980-10-23 Reticle amendment

Publications (1)

Publication Number Publication Date
JPS5772324A true JPS5772324A (en) 1982-05-06

Family

ID=15455937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14858180A Pending JPS5772324A (en) 1980-10-23 1980-10-23 Reticle amendment

Country Status (1)

Country Link
JP (1) JPS5772324A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979178A (en) * 1972-12-04 1974-07-31
JPS52125269A (en) * 1976-04-14 1977-10-20 Nec Corp Removing device for projecting defects from wafer
JPS5371563A (en) * 1976-12-08 1978-06-26 Hitachi Ltd Automatic inspection correcting method for mask

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979178A (en) * 1972-12-04 1974-07-31
JPS52125269A (en) * 1976-04-14 1977-10-20 Nec Corp Removing device for projecting defects from wafer
JPS5371563A (en) * 1976-12-08 1978-06-26 Hitachi Ltd Automatic inspection correcting method for mask

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