JPS5770271A - Method for nitriding titanium and titanium alloy - Google Patents

Method for nitriding titanium and titanium alloy

Info

Publication number
JPS5770271A
JPS5770271A JP14698280A JP14698280A JPS5770271A JP S5770271 A JPS5770271 A JP S5770271A JP 14698280 A JP14698280 A JP 14698280A JP 14698280 A JP14698280 A JP 14698280A JP S5770271 A JPS5770271 A JP S5770271A
Authority
JP
Japan
Prior art keywords
alloy
product
powder
embedded
temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14698280A
Other languages
Japanese (ja)
Inventor
Shoichi Kiyooka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PAAKAA OZAKI KOGYO KK
PARKER OZAKI KOGYO KK
Original Assignee
PAAKAA OZAKI KOGYO KK
PARKER OZAKI KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PAAKAA OZAKI KOGYO KK, PARKER OZAKI KOGYO KK filed Critical PAAKAA OZAKI KOGYO KK
Priority to JP14698280A priority Critical patent/JPS5770271A/en
Publication of JPS5770271A publication Critical patent/JPS5770271A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/24—Nitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Abstract

PURPOSE:To easily and certainly prepare an excellent Ti nitride product by a method wherein a Ti product is embedded in a mixed powder of a Ti powder and a halogen compound releasing a halogen containing gas in a specific temp. range. CONSTITUTION:In a mixed powder of Ti or a Ti alloy powder and a small amount of a halogen compound which is decomposed at 200-700 deg.C to release a halogen containing gas such as for example, PVC, AlCl3 or the like, Ti or a Ti alloy product is embedded. Then, said embedded Ti alloy product is heated in a N2 gas atmosphere and held under an appropriate nitriding condition. The halogen compound is decomposed during raising of a temp. to a nitriding temp. to activate Ti or the Ti alloy powder around thereof. Therefore, a minute amount of O2 or moisture in the N2 gas is fully reacted at first on a surface of Ti or the Ti alloy powder and only high purity N2 is reached to the surface of Ti or the Ti alloy product. Further, N2 flow becomes uniform and an always stable nitride product can be obtained.
JP14698280A 1980-10-22 1980-10-22 Method for nitriding titanium and titanium alloy Pending JPS5770271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14698280A JPS5770271A (en) 1980-10-22 1980-10-22 Method for nitriding titanium and titanium alloy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14698280A JPS5770271A (en) 1980-10-22 1980-10-22 Method for nitriding titanium and titanium alloy

Publications (1)

Publication Number Publication Date
JPS5770271A true JPS5770271A (en) 1982-04-30

Family

ID=15419945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14698280A Pending JPS5770271A (en) 1980-10-22 1980-10-22 Method for nitriding titanium and titanium alloy

Country Status (1)

Country Link
JP (1) JPS5770271A (en)

Similar Documents

Publication Publication Date Title
EP0543009A4 (en) Process for purifying nitrogen trifluoride gas.
DE3166961D1 (en) Process for the manufacture of polycrystalline films of semiconductors formed by compounds or elements, and films thus obtained
JPS57158370A (en) Formation of metallic thin film
GB896766A (en) Improvements in and relating to nitriding aluminum
EP0105463A3 (en) Silicon article and method of manufacturing the same
GB2023185A (en) Co-sintered Silicon Carbide- aluminium Nitride Products and a Method for their Production
DE58907842D1 (en) Process for the production of silicon nitride.
JPS5770271A (en) Method for nitriding titanium and titanium alloy
JPS53133600A (en) Production of silicon nitride
ES461297A1 (en) Method of forming a silicon nitride article
JPS56155007A (en) Preparation of titanium nitride
JPS56129696A (en) Crystal growing apparatus
JPS54134099A (en) Production of silicon nitride
JPS5547211A (en) Production of lithium nitride
JPS5685830A (en) Heat treatment of compound semiconductor
JPS51132192A (en) Thermochemical process for production of hydrogen by cuprous-cupric sy stem
IL66693A0 (en) Preparation of tetramethyloxirane
JPS55140711A (en) Manufacture of silicon carbide powder
JPS56100141A (en) Manufacture of nitrogen-containing glass
JPS5458700A (en) Production of alpha-type silicon nitride
Schonfelder et al. Process for the Production of Silicon Nitride
Ueno et al. Producing Silicon Nitride Sintered Products
JPS57179024A (en) Compound having hexagonal system laminar structure represented by ybgamno4 and its manufacture
Hunold et al. Hochreine Siliciumnitridbauteile zur Handhabung von Solarsiliciumschmelzen. Schlussbericht.(High purity parts of silicon nitride for the handling of silicon melts for solar cells. Final report)
ES475481A1 (en) Process for the preparation of tetrachloropyrimidine.