JPS5768030A - Manufacture of x-ray exposure mask substrate - Google Patents

Manufacture of x-ray exposure mask substrate

Info

Publication number
JPS5768030A
JPS5768030A JP14394480A JP14394480A JPS5768030A JP S5768030 A JPS5768030 A JP S5768030A JP 14394480 A JP14394480 A JP 14394480A JP 14394480 A JP14394480 A JP 14394480A JP S5768030 A JPS5768030 A JP S5768030A
Authority
JP
Japan
Prior art keywords
substrate
approx
film
projected
ray exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14394480A
Other languages
Japanese (ja)
Inventor
Tetsunori Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14394480A priority Critical patent/JPS5768030A/en
Publication of JPS5768030A publication Critical patent/JPS5768030A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a mask substrate in extremely high accuracy by coating and drying organic solvent on the overall projected surface with a substrate projected in section on one surfac and smoothly polished on the surface to flatten the substrate by the contraction and expansion forces of the organic layer, and then etching the back surface of the substrate. CONSTITUTION:A substrate 11 is raised on one upper surface in the order of approx. several mum, is smoothly polished in a thickness of approx. 0.4mm. with a diameter of approx. 3 inches in a silicon wafer, polyamic acid solution is rotatably coated on the projected surface side of the substrate 11, is allowed to stand at 350 deg.C for 1hr, and is then gradually cooled. Thus, the solution is dried to form a polyimide resin film 12, and the substrate 11 is approximately flattened by the contraction and expansion forces. Thereafter, X-ray exposure circuit pattern is formed on the film 12, and is etched and removed until the center on the back surface of the substrate 11 is exposed from the film 12. In this manner, the pattern accuracy when the electron beam is drawn thereon can be reduced to the order of + or -0.1mum.
JP14394480A 1980-10-15 1980-10-15 Manufacture of x-ray exposure mask substrate Pending JPS5768030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14394480A JPS5768030A (en) 1980-10-15 1980-10-15 Manufacture of x-ray exposure mask substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14394480A JPS5768030A (en) 1980-10-15 1980-10-15 Manufacture of x-ray exposure mask substrate

Publications (1)

Publication Number Publication Date
JPS5768030A true JPS5768030A (en) 1982-04-26

Family

ID=15350684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14394480A Pending JPS5768030A (en) 1980-10-15 1980-10-15 Manufacture of x-ray exposure mask substrate

Country Status (1)

Country Link
JP (1) JPS5768030A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010102356A (en) * 2002-03-29 2010-05-06 Hoya Corp Method of producing mask blank and method of producing transfer mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010102356A (en) * 2002-03-29 2010-05-06 Hoya Corp Method of producing mask blank and method of producing transfer mask

Similar Documents

Publication Publication Date Title
JPH0142133B2 (en)
JPS5768030A (en) Manufacture of x-ray exposure mask substrate
JPS54148484A (en) Manufacture of semiconductor wafer test device
US3520685A (en) Etching silicon dioxide by direct photolysis
JPS5562732A (en) Preparation of aperture stop
JPS57143826A (en) Formation of resist pattern on gapped semiconductor substrate
JPS59141228A (en) Formation of fine pattern
JPH0337295B2 (en)
JPS56132343A (en) Mask for x-ray exposure and its manufacture
JPS60153124A (en) Formation of coating film
JPS604221A (en) Manufacture of semiconductor device
JPS6256947A (en) Composition for flattened layer for resist having two-layered structure
JPS57136321A (en) Manufacture of resist stencil mask for lift-off
JPS54101292A (en) Contact forming method
JPS5760840A (en) Manufacture of silicon mask for x-ray exposure
JPS57139943A (en) Manufacture of semiconductor device
JPS6462491A (en) Formation of metallic pattern
JPS648622A (en) Manufacture of semiconductor device
JPS5522833A (en) Manufacturing of semiconductor device
JPS5562751A (en) Method of forming aluminum wiring pattern
JPS5710928A (en) Manufacture of semiconductor element
JPS585743A (en) Production of mask for x-ray exposure
JPS57141924A (en) Pattern forming method
JPS54115066A (en) Manufacture for semiconductor device
JPS5527637A (en) Photo-resist-pattern forming method