JPS5767017A - Manufacture of thin silicon film - Google Patents

Manufacture of thin silicon film

Info

Publication number
JPS5767017A
JPS5767017A JP14039480A JP14039480A JPS5767017A JP S5767017 A JPS5767017 A JP S5767017A JP 14039480 A JP14039480 A JP 14039480A JP 14039480 A JP14039480 A JP 14039480A JP S5767017 A JPS5767017 A JP S5767017A
Authority
JP
Japan
Prior art keywords
silicon
silicon film
particles
substrate
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14039480A
Other languages
English (en)
Inventor
Takao Edahiro
Motohiro Nakahara
Masao Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14039480A priority Critical patent/JPS5767017A/ja
Publication of JPS5767017A publication Critical patent/JPS5767017A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP14039480A 1980-10-09 1980-10-09 Manufacture of thin silicon film Pending JPS5767017A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14039480A JPS5767017A (en) 1980-10-09 1980-10-09 Manufacture of thin silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14039480A JPS5767017A (en) 1980-10-09 1980-10-09 Manufacture of thin silicon film

Publications (1)

Publication Number Publication Date
JPS5767017A true JPS5767017A (en) 1982-04-23

Family

ID=15267771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14039480A Pending JPS5767017A (en) 1980-10-09 1980-10-09 Manufacture of thin silicon film

Country Status (1)

Country Link
JP (1) JPS5767017A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0242067U (ja) * 1988-09-19 1990-03-23
WO2014045252A1 (fr) * 2012-09-24 2014-03-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d'une couche de silicium epitaxiee

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0242067U (ja) * 1988-09-19 1990-03-23
JPH0527504Y2 (ja) * 1988-09-19 1993-07-13
WO2014045252A1 (fr) * 2012-09-24 2014-03-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d'une couche de silicium epitaxiee
FR2995913A1 (fr) * 2012-09-24 2014-03-28 Commissariat Energie Atomique Procede de formation d'une couche de silicium epitaxiee.
CN104781455A (zh) * 2012-09-24 2015-07-15 原子能与替代能源委员会 用于形成硅外延层的方法

Similar Documents

Publication Publication Date Title
US4870245A (en) Plasma enhanced thermal treatment apparatus
IE50240B1 (en) A method of vapour phase growth and apparatus therefor
EP0617142A1 (en) Preparation of silica thin films
JPS59198718A (ja) 気相法による被膜作製方法
JPS5767017A (en) Manufacture of thin silicon film
GB1136881A (en) Vapour growth of silicon crystals and apparatus for producing the same
JPS59188913A (ja) 光ｃｖｄ装置
GB934673A (en) Improvements in or relating to the production of semi-conductor materials
JPS5767016A (en) Manufacture of thin silicon film
JPH0273978A (ja) 薄膜形成法
GB1125444A (en) Method and apparatus for the preparation of thin layers
JPS5767015A (en) Manufacture of thin silicon film
JPS57123969A (en) Formation of zinc oxide film by vapor phase method using plasma
JPS61234531A (ja) シリコン酸化物の作製方法
JPS5749220A (en) Plasma gas phase method
JPS55164072A (en) Coating
JPH0463536B2 (ja)
JPS61139667A (ja) 炭化珪素薄膜の形成方法
JPS62235466A (ja) 蒸着物質発生装置
JP3701335B2 (ja) 大気圧プラズマによる薄膜作製方法
JPH07161646A (ja) 多結晶膜作成方法
JPS5727914A (en) Manufacture of thin silicon carbide film
JPS6199150A (ja) 堆積膜の形成法
JPH0461336A (ja) 薄膜の形成方法および薄膜の形成装置
JPS6299463A (ja) 堆積膜形成法