JPS5767017A - Manufacture of thin silicon film - Google Patents
Manufacture of thin silicon filmInfo
- Publication number
- JPS5767017A JPS5767017A JP14039480A JP14039480A JPS5767017A JP S5767017 A JPS5767017 A JP S5767017A JP 14039480 A JP14039480 A JP 14039480A JP 14039480 A JP14039480 A JP 14039480A JP S5767017 A JPS5767017 A JP S5767017A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon film
- particles
- substrate
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14039480A JPS5767017A (en) | 1980-10-09 | 1980-10-09 | Manufacture of thin silicon film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14039480A JPS5767017A (en) | 1980-10-09 | 1980-10-09 | Manufacture of thin silicon film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5767017A true JPS5767017A (en) | 1982-04-23 |
Family
ID=15267771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14039480A Pending JPS5767017A (en) | 1980-10-09 | 1980-10-09 | Manufacture of thin silicon film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5767017A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0242067U (ja) * | 1988-09-19 | 1990-03-23 | ||
WO2014045252A1 (fr) * | 2012-09-24 | 2014-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d'une couche de silicium epitaxiee |
-
1980
- 1980-10-09 JP JP14039480A patent/JPS5767017A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0242067U (ja) * | 1988-09-19 | 1990-03-23 | ||
JPH0527504Y2 (ja) * | 1988-09-19 | 1993-07-13 | ||
WO2014045252A1 (fr) * | 2012-09-24 | 2014-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d'une couche de silicium epitaxiee |
FR2995913A1 (fr) * | 2012-09-24 | 2014-03-28 | Commissariat Energie Atomique | Procede de formation d'une couche de silicium epitaxiee. |
CN104781455A (zh) * | 2012-09-24 | 2015-07-15 | 原子能与替代能源委员会 | 用于形成硅外延层的方法 |
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