JPS5762526A - Vapor growth of gan - Google Patents

Vapor growth of gan

Info

Publication number
JPS5762526A
JPS5762526A JP13909080A JP13909080A JPS5762526A JP S5762526 A JPS5762526 A JP S5762526A JP 13909080 A JP13909080 A JP 13909080A JP 13909080 A JP13909080 A JP 13909080A JP S5762526 A JPS5762526 A JP S5762526A
Authority
JP
Japan
Prior art keywords
gan
atm
single crystal
carrier gas
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13909080A
Other languages
Japanese (ja)
Other versions
JPS636139B2 (en
Inventor
Kiyoshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP13909080A priority Critical patent/JPS5762526A/en
Publication of JPS5762526A publication Critical patent/JPS5762526A/en
Publication of JPS636139B2 publication Critical patent/JPS636139B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a GaN single crystal with a flat surface by setting conditions such as the gas partial pressure of a reaction system within a predetermined range when the single crystal is grown on a sapphire substrate in the gaseous phase through a GaN-NH3 group reaction. CONSTITUTION:When GaN formed by reacting GaCl, which is formed by forwarding an HCl gas to gallium 13 on a boat 9 in a growth oven 1 by an N2 carrier gas, and NH3 in the N2 carrier gas is grown to the single crystal on the sapphire substrate 14 kept at a crystal growth temperature by means of a heater 12b, HCl is made 1.25X10<-3>-2.50X10<-3>atm., NH3 1.63X10<-1>-2.50X10<-1>atm., the carrier gas N2 of HCl 1.25X10<-1>-1.88X10<-1>atm., and the carrier gas N2 of NH3 4.35X 10<-1>-7.11X10<-1>atm. in the gas partial pressure of these reaction systems respectively and the velocity of crystal growth is made 5-10mum/hr when the temperature of the substrate is 960-980 deg.C and the inside of the oven 1 has 1atm. Accordingly, the desired GaN single crystal is obtained.
JP13909080A 1980-10-03 1980-10-03 Vapor growth of gan Granted JPS5762526A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13909080A JPS5762526A (en) 1980-10-03 1980-10-03 Vapor growth of gan

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13909080A JPS5762526A (en) 1980-10-03 1980-10-03 Vapor growth of gan

Publications (2)

Publication Number Publication Date
JPS5762526A true JPS5762526A (en) 1982-04-15
JPS636139B2 JPS636139B2 (en) 1988-02-08

Family

ID=15237250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13909080A Granted JPS5762526A (en) 1980-10-03 1980-10-03 Vapor growth of gan

Country Status (1)

Country Link
JP (1) JPS5762526A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110809A (en) * 1998-03-26 2000-08-29 Sze; Simon M. Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110809A (en) * 1998-03-26 2000-08-29 Sze; Simon M. Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer

Also Published As

Publication number Publication date
JPS636139B2 (en) 1988-02-08

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