JPS5756309A - Carbon substrate for coating silicon carbide - Google Patents

Carbon substrate for coating silicon carbide

Info

Publication number
JPS5756309A
JPS5756309A JP55129938A JP12993880A JPS5756309A JP S5756309 A JPS5756309 A JP S5756309A JP 55129938 A JP55129938 A JP 55129938A JP 12993880 A JP12993880 A JP 12993880A JP S5756309 A JPS5756309 A JP S5756309A
Authority
JP
Japan
Prior art keywords
silicon carbide
layer
carbon substrate
carbon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55129938A
Other languages
Japanese (ja)
Inventor
Hiroshi Yamazaki
Katsumi Hoshina
Nobuyuki Uejima
Yasumi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP55129938A priority Critical patent/JPS5756309A/en
Publication of JPS5756309A publication Critical patent/JPS5756309A/en
Pending legal-status Critical Current

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  • Carbon And Carbon Compounds (AREA)

Abstract

PURPOSE: To obtain improved spalling resistance and to prevent the occurrence of cracks and peeling by specifying the porosity and pore size of a carbon substrate for coating silicon carbide.
CONSTITUTION: A carbon substrate having 5W30% porosity and contg. no pore having ≥100μm size and 0.04W0.1cc/g pores having 0.1W10μm size measured with a mercury porosimeter is used. When this substrate is coated with silicon carbide, a structure composed of an outer surface layer 1 of silicon carbide alone, an intermediate layer 2 of a mixture of silicon carbide with carbon, and a carbon substrate layer 3 is obtd., and by using said carbon substrate as the layer 3, the layer 2 is formed in a uniform thickness, and the layer 1 is also formed in a uniform thickness almost in parallel with the layer 2.
COPYRIGHT: (C)1982,JPO&Japio
JP55129938A 1980-09-17 1980-09-17 Carbon substrate for coating silicon carbide Pending JPS5756309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55129938A JPS5756309A (en) 1980-09-17 1980-09-17 Carbon substrate for coating silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55129938A JPS5756309A (en) 1980-09-17 1980-09-17 Carbon substrate for coating silicon carbide

Publications (1)

Publication Number Publication Date
JPS5756309A true JPS5756309A (en) 1982-04-03

Family

ID=15022139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55129938A Pending JPS5756309A (en) 1980-09-17 1980-09-17 Carbon substrate for coating silicon carbide

Country Status (1)

Country Link
JP (1) JPS5756309A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5623386A (en) * 1994-10-31 1997-04-22 Sullivan; Thomas M. Magnetic recording component
US5850329A (en) * 1994-10-31 1998-12-15 Sullivan; Thomas Milton Magnetic recording device components
US6077619A (en) * 1994-10-31 2000-06-20 Sullivan; Thomas M. Polycrystalline silicon carbide ceramic wafer and substrate
US6309766B1 (en) 1994-10-31 2001-10-30 Thomas M. Sullivan Polycrystalline silicon carbide ceramic wafer and substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5623386A (en) * 1994-10-31 1997-04-22 Sullivan; Thomas M. Magnetic recording component
US5850329A (en) * 1994-10-31 1998-12-15 Sullivan; Thomas Milton Magnetic recording device components
US6077619A (en) * 1994-10-31 2000-06-20 Sullivan; Thomas M. Polycrystalline silicon carbide ceramic wafer and substrate
US6309766B1 (en) 1994-10-31 2001-10-30 Thomas M. Sullivan Polycrystalline silicon carbide ceramic wafer and substrate

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