JPS5755307B2 - - Google Patents
Info
- Publication number
- JPS5755307B2 JPS5755307B2 JP52058232A JP5823277A JPS5755307B2 JP S5755307 B2 JPS5755307 B2 JP S5755307B2 JP 52058232 A JP52058232 A JP 52058232A JP 5823277 A JP5823277 A JP 5823277A JP S5755307 B2 JPS5755307 B2 JP S5755307B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/688,662 US4030943A (en) | 1976-05-21 | 1976-05-21 | Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52143780A JPS52143780A (en) | 1977-11-30 |
| JPS5755307B2 true JPS5755307B2 (enExample) | 1982-11-24 |
Family
ID=24765273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5823277A Granted JPS52143780A (en) | 1976-05-21 | 1977-05-21 | Method of producing planar to fabricate hf semiconductor element |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US4030943A (enExample) |
| JP (1) | JPS52143780A (enExample) |
| DE (1) | DE2721397C3 (enExample) |
| FR (1) | FR2352398A1 (enExample) |
| GB (1) | GB1532579A (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4160992A (en) * | 1977-09-14 | 1979-07-10 | Raytheon Company | Plural semiconductor devices mounted between plural heat sinks |
| GB2100925B (en) * | 1981-06-25 | 1985-06-05 | Standard Telephones Cables Ltd | Fabricating integrated circuits |
| JPS58170044A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体素子 |
| US4585299A (en) * | 1983-07-19 | 1986-04-29 | Fairchild Semiconductor Corporation | Process for fabricating optical wave-guiding components and components made by the process |
| US4872039A (en) * | 1986-04-25 | 1989-10-03 | General Electric Company | Buried lateral diode and method for making same |
| US4789642A (en) * | 1987-03-26 | 1988-12-06 | The United States Of America As Represented By The Secretary Of The Air Force | Method for fabricating low loss crystalline silicon waveguides by dielectric implantation |
| US4787691A (en) * | 1987-03-26 | 1988-11-29 | The United States Of America As Represented By The Secretary Of The Air Force | Electro-optical silicon devices |
| US4970578A (en) * | 1987-05-01 | 1990-11-13 | Raytheon Company | Selective backside plating of GaAs monolithic microwave integrated circuits |
| US4800420A (en) * | 1987-05-14 | 1989-01-24 | Hughes Aircraft Company | Two-terminal semiconductor diode arrangement |
| DE3718684A1 (de) * | 1987-06-04 | 1988-12-22 | Licentia Gmbh | Halbleiterkoerper |
| US5449953A (en) * | 1990-09-14 | 1995-09-12 | Westinghouse Electric Corporation | Monolithic microwave integrated circuit on high resistivity silicon |
| US5063177A (en) * | 1990-10-04 | 1991-11-05 | Comsat | Method of packaging microwave semiconductor components and integrated circuits |
| DE4209983A1 (de) * | 1992-03-27 | 1993-09-30 | Daimler Benz Ag | Verfahren zur Herstellung von in einem Gehäuse angeordneten Halbleiterbauelementen |
| US5652461A (en) * | 1992-06-03 | 1997-07-29 | Seiko Epson Corporation | Semiconductor device with a convex heat sink |
| JPH07115175A (ja) * | 1993-10-14 | 1995-05-02 | Nec Corp | 半導体装置 |
| US5795495A (en) * | 1994-04-25 | 1998-08-18 | Micron Technology, Inc. | Method of chemical mechanical polishing for dielectric layers |
| US5559359A (en) * | 1994-07-29 | 1996-09-24 | Reyes; Adolfo C. | Microwave integrated circuit passive element structure and method for reducing signal propagation losses |
| DE4433330C2 (de) * | 1994-09-19 | 1997-01-30 | Fraunhofer Ges Forschung | Verfahren zur Herstellung von Halbleiterstrukturen mit vorteilhaften Hochfrequenzeigenschaften sowie eine Halbleiterwaferstruktur |
| US6265771B1 (en) * | 1999-01-27 | 2001-07-24 | International Business Machines Corporation | Dual chip with heat sink |
| CN1222092C (zh) * | 2000-11-29 | 2005-10-05 | 三菱化学株式会社 | 半导体发光器件 |
| US6900501B2 (en) * | 2001-11-02 | 2005-05-31 | Cree Microwave, Inc. | Silicon on insulator device with improved heat removal |
| JP2009246157A (ja) * | 2008-03-31 | 2009-10-22 | Toshiba Corp | 高周波帯半導体装置 |
| EP2386059A1 (en) | 2009-01-11 | 2011-11-16 | Brightview Systems Ltd. | A system and method for thin film quality assurance |
| DE102010002204A1 (de) * | 2010-02-22 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Halbleiterdiode und Verfahren zum Herstellen einer Halbleiterdiode |
| US8816503B2 (en) * | 2011-08-29 | 2014-08-26 | Infineon Technologies Austria Ag | Semiconductor device with buried electrode |
| US9178261B2 (en) * | 2012-07-11 | 2015-11-03 | University Of South Florida | Vertical microcoaxial interconnects |
| US9329415B2 (en) | 2012-11-05 | 2016-05-03 | Agency For Science, Technology And Research | Method for forming an optical modulator |
| US9412879B2 (en) | 2013-07-18 | 2016-08-09 | Texas Instruments Incorporated | Integration of the silicon IMPATT diode in an analog technology |
| US9659717B2 (en) | 2014-02-18 | 2017-05-23 | Analog Devices Global | MEMS device with constant capacitance |
| US9748048B2 (en) | 2014-04-25 | 2017-08-29 | Analog Devices Global | MEMS switch |
| US9583294B2 (en) | 2014-04-25 | 2017-02-28 | Analog Devices Global | MEMS swtich with internal conductive path |
| EP3411894B1 (en) | 2016-02-04 | 2023-06-14 | Analog Devices International Unlimited Company | Active opening mems switch device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3383567A (en) * | 1965-09-15 | 1968-05-14 | Ion Physics Corp | Solid state translating device comprising irradiation implanted conductivity ions |
| US3431150A (en) * | 1966-10-07 | 1969-03-04 | Us Air Force | Process for implanting grids in semiconductor devices |
| US3558366A (en) * | 1968-09-17 | 1971-01-26 | Bell Telephone Labor Inc | Metal shielding for ion implanted semiconductor device |
| FR2160759B1 (enExample) * | 1971-11-26 | 1974-05-31 | Thomson Csf | |
| US3743967A (en) * | 1972-03-16 | 1973-07-03 | Boeing Co | Stabilized trapatt oscillator diode |
| JPS4924361A (enExample) * | 1972-06-27 | 1974-03-04 | ||
| US3808058A (en) * | 1972-08-17 | 1974-04-30 | Bell Telephone Labor Inc | Fabrication of mesa diode with channel guard |
| GB1447723A (en) * | 1974-02-08 | 1976-08-25 | Post Office | Semiconductor devices |
| US3874918A (en) * | 1974-02-19 | 1975-04-01 | Trw Inc | Structure and process for semiconductor device using batch processing |
| US3990099A (en) * | 1974-12-05 | 1976-11-02 | Rca Corporation | Planar Trapatt diode |
-
1976
- 1976-05-21 US US05/688,662 patent/US4030943A/en not_active Expired - Lifetime
-
1977
- 1977-01-24 US US05/762,547 patent/US4091408A/en not_active Expired - Lifetime
- 1977-05-04 GB GB18669/77A patent/GB1532579A/en not_active Expired
- 1977-05-12 DE DE2721397A patent/DE2721397C3/de not_active Expired
- 1977-05-20 FR FR7715601A patent/FR2352398A1/fr active Granted
- 1977-05-21 JP JP5823277A patent/JPS52143780A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52143780A (en) | 1977-11-30 |
| GB1532579A (en) | 1978-11-15 |
| FR2352398A1 (fr) | 1977-12-16 |
| DE2721397B2 (de) | 1979-04-19 |
| DE2721397C3 (de) | 1980-01-03 |
| DE2721397A1 (de) | 1977-11-24 |
| FR2352398B1 (enExample) | 1984-06-22 |
| US4030943A (en) | 1977-06-21 |
| US4091408A (en) | 1978-05-23 |