JPS5753888A - - Google Patents

Info

Publication number
JPS5753888A
JPS5753888A JP56118364A JP11836481A JPS5753888A JP S5753888 A JPS5753888 A JP S5753888A JP 56118364 A JP56118364 A JP 56118364A JP 11836481 A JP11836481 A JP 11836481A JP S5753888 A JPS5753888 A JP S5753888A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56118364A
Inventor
Ururu Kaaruhaintsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5753888A publication Critical patent/JPS5753888A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP56118364A 1980-07-29 1981-07-28 Pending JPS5753888A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3028754A DE3028754C2 (de) 1980-07-29 1980-07-29 Dynamischer Leseverstärker für MOS-Halbleiterspeicher

Publications (1)

Publication Number Publication Date
JPS5753888A true JPS5753888A (ja) 1982-03-31

Family

ID=6108390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56118364A Pending JPS5753888A (ja) 1980-07-29 1981-07-28

Country Status (4)

Country Link
US (1) US4379345A (ja)
EP (1) EP0045020B1 (ja)
JP (1) JPS5753888A (ja)
DE (1) DE3028754C2 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665507A (en) * 1984-04-20 1987-05-12 Hitachi, Ltd. Semiconductor memory having load devices controlled by a write signal
LU86915A1 (de) * 1986-10-07 1987-11-11 Siemens Ag Breitbandsignal-koppeleinrichtung
US5010519A (en) * 1987-11-17 1991-04-23 Mitsubishi Denki Kabushiki Kaisha Dynamic semiconductor memory device formed by 2-transistor cells
JPH07109720B2 (ja) * 1988-07-29 1995-11-22 三菱電機株式会社 不揮発性半導体記憶装置
JP2583606B2 (ja) * 1989-05-16 1997-02-19 富士通株式会社 センスアンプ回路
EP0747903B1 (en) * 1995-04-28 2002-04-10 STMicroelectronics S.r.l. Reading circuit for memory cells devices having a low supply voltage
GB2345600B (en) * 1999-01-09 2003-07-30 Mitel Semiconductor Ltd Voltage to current converter
US10192611B1 (en) * 2017-09-05 2019-01-29 National Tsing Hua University Sensing circuit, set of pre-amplifiers, and operating method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123849A (en) * 1976-04-09 1977-10-18 Nec Corp Amplifier circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1774948C3 (de) * 1966-02-16 1974-02-14 Rca Corp., New York, N.Y. (V.St.A.) Wortorganisierter Speicher. Ausscheidung aus: 1499843
JPS51139220A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Sense amplifier
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US4077031A (en) * 1976-08-23 1978-02-28 Texas Instruments Incorporated High speed address buffer for semiconductor memory
US4110841A (en) * 1977-12-06 1978-08-29 Bell Telephone Laboratories, Incorporated Level shifter and sense-refresh detector
DE2758810C2 (de) * 1977-12-30 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Bewerterschaltung für Halbleiterspeicher
US4170741A (en) * 1978-03-13 1979-10-09 Westinghouse Electric Corp. High speed CMOS sense circuit for semiconductor memories
US4247791A (en) * 1978-04-03 1981-01-27 Rockwell International Corporation CMOS Memory sense amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123849A (en) * 1976-04-09 1977-10-18 Nec Corp Amplifier circuit

Also Published As

Publication number Publication date
EP0045020A2 (de) 1982-02-03
DE3028754A1 (de) 1982-02-18
US4379345A (en) 1983-04-05
DE3028754C2 (de) 1982-10-28
EP0045020B1 (de) 1986-10-22
EP0045020A3 (en) 1983-03-30

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