JPS5750396A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5750396A
JPS5750396A JP55124841A JP12484180A JPS5750396A JP S5750396 A JPS5750396 A JP S5750396A JP 55124841 A JP55124841 A JP 55124841A JP 12484180 A JP12484180 A JP 12484180A JP S5750396 A JPS5750396 A JP S5750396A
Authority
JP
Japan
Prior art keywords
memory
coincidence
circuits
defects
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55124841A
Other languages
Japanese (ja)
Inventor
Hideyoshi Shimura
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55124841A priority Critical patent/JPS5750396A/en
Publication of JPS5750396A publication Critical patent/JPS5750396A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To realize the high-degree relief of defects and to increase the yield of a semiconductor memory, by selectively decoding the redundant memory region with an output of coincidence with an address that specifies the defective block of a main memory. CONSTITUTION:When a coincidence is obtained between the fixed addresses of circuits 25 and 25 that fix the address information in the main memory block region where a defective memory cell exists and a prescribed low address signal in the address signal, the outputs of coincidence circuits 22 and 22 are inverted to a high level, respectively. The outputs of coincidence of these circuits 22 and 22 are decoded, and accordingly no access is given to the defective memory and the main memory block. The block corresponding to a redundant memory receives an access to relieve even the defects of two blocks. If the number of circuits 22 is more increased, the relief is possible even for the defects of several bits in group. In such way, the high-degree relief is possible to increase the yield of a semiconductor memory.
JP55124841A 1980-09-09 1980-09-09 Semiconductor memory device Pending JPS5750396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55124841A JPS5750396A (en) 1980-09-09 1980-09-09 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55124841A JPS5750396A (en) 1980-09-09 1980-09-09 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5750396A true JPS5750396A (en) 1982-03-24

Family

ID=14895411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55124841A Pending JPS5750396A (en) 1980-09-09 1980-09-09 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5750396A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138336A (en) * 1975-05-26 1976-11-29 Hitachi Ltd Memory sysem
JPS51138344A (en) * 1975-05-26 1976-11-29 Hitachi Ltd Memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138336A (en) * 1975-05-26 1976-11-29 Hitachi Ltd Memory sysem
JPS51138344A (en) * 1975-05-26 1976-11-29 Hitachi Ltd Memory device

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