JPS57502029A - - Google Patents
Info
- Publication number
- JPS57502029A JPS57502029A JP57500225A JP50022582A JPS57502029A JP S57502029 A JPS57502029 A JP S57502029A JP 57500225 A JP57500225 A JP 57500225A JP 50022582 A JP50022582 A JP 50022582A JP S57502029 A JPS57502029 A JP S57502029A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/157—CCD or CID infrared image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/157—CCD or CID infrared image sensors
- H10F39/1575—CCD or CID infrared image sensors of the hybrid type
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21149380A | 1980-12-01 | 1980-12-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57502029A true JPS57502029A (enExample) | 1982-11-11 |
Family
ID=22787141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57500225A Pending JPS57502029A (enExample) | 1980-12-01 | 1981-12-01 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0065571A4 (enExample) |
| JP (1) | JPS57502029A (enExample) |
| IT (1) | IT8149780A0 (enExample) |
| WO (1) | WO1982001962A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689487A (en) * | 1984-09-03 | 1987-08-25 | Kabushiki Kaisha Toshiba | Radiographic image detection apparatus |
| NL8501542A (nl) * | 1985-05-30 | 1986-12-16 | Philips Nv | Ladingsgekoppelde inrichting. |
| US4896340A (en) * | 1985-11-01 | 1990-01-23 | Hughes Aircraft Company | Partial direct injection for signal processing system |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3660697A (en) * | 1970-02-16 | 1972-05-02 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
| DE2501934C2 (de) * | 1974-01-25 | 1982-11-11 | Hughes Aircraft Co., Culver City, Calif. | Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens |
| JPS5513426B2 (enExample) * | 1974-06-18 | 1980-04-09 | ||
| US4110776A (en) * | 1976-09-27 | 1978-08-29 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
| US4275407A (en) * | 1977-09-01 | 1981-06-23 | Honeywell Inc. | Durable insulating protective layer for hybrid CCD/mosaic IR detector array |
| US4297721A (en) * | 1978-11-03 | 1981-10-27 | Mostek Corporation | Extremely low current load device for integrated circuit |
| US4210465A (en) * | 1978-11-20 | 1980-07-01 | Ncr Corporation | CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel |
| US4232221A (en) * | 1979-01-22 | 1980-11-04 | The United States Of America As Represented By The Secretary Of The Air Force | Method and apparatus for trimming IR/CCD mosaic sensors |
| US4291328A (en) * | 1979-06-15 | 1981-09-22 | Texas Instruments Incorporated | Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon |
-
1981
- 1981-11-27 IT IT8149780A patent/IT8149780A0/it unknown
- 1981-12-01 JP JP57500225A patent/JPS57502029A/ja active Pending
- 1981-12-01 EP EP19820900203 patent/EP0065571A4/en not_active Withdrawn
- 1981-12-01 WO PCT/US1981/001587 patent/WO1982001962A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| IT8149780A0 (it) | 1981-11-27 |
| EP0065571A1 (en) | 1982-12-01 |
| EP0065571A4 (en) | 1985-03-06 |
| WO1982001962A1 (en) | 1982-06-10 |