JPS5745285A - High withstand voltage diode - Google Patents
High withstand voltage diodeInfo
- Publication number
- JPS5745285A JPS5745285A JP12049380A JP12049380A JPS5745285A JP S5745285 A JPS5745285 A JP S5745285A JP 12049380 A JP12049380 A JP 12049380A JP 12049380 A JP12049380 A JP 12049380A JP S5745285 A JPS5745285 A JP S5745285A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- low resistance
- withstand voltage
- widening
- depletion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000903 blocking effect Effects 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 230000002040 relaxant effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12049380A JPS5745285A (en) | 1980-08-29 | 1980-08-29 | High withstand voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12049380A JPS5745285A (en) | 1980-08-29 | 1980-08-29 | High withstand voltage diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5745285A true JPS5745285A (en) | 1982-03-15 |
| JPS6328346B2 JPS6328346B2 (ja) | 1988-06-08 |
Family
ID=14787551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12049380A Granted JPS5745285A (en) | 1980-08-29 | 1980-08-29 | High withstand voltage diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5745285A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997012403A1 (fr) * | 1995-09-27 | 1997-04-03 | Hitachi, Ltd. | Diode |
| CN115881827B (zh) * | 2022-11-28 | 2023-07-07 | 重庆理工大学 | 基于整片晶圆的氧化镍/氧化镓异质结二极管及制备方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02116946U (ja) * | 1989-03-04 | 1990-09-19 | ||
| US9704768B2 (en) | 2013-12-17 | 2017-07-11 | Mitsubishi Electric Corporation | Power semiconductor module |
-
1980
- 1980-08-29 JP JP12049380A patent/JPS5745285A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997012403A1 (fr) * | 1995-09-27 | 1997-04-03 | Hitachi, Ltd. | Diode |
| CN115881827B (zh) * | 2022-11-28 | 2023-07-07 | 重庆理工大学 | 基于整片晶圆的氧化镍/氧化镓异质结二极管及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6328346B2 (ja) | 1988-06-08 |
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