JPS5742536A - Preparation of transparent conductive film - Google Patents
Preparation of transparent conductive filmInfo
- Publication number
- JPS5742536A JPS5742536A JP11611180A JP11611180A JPS5742536A JP S5742536 A JPS5742536 A JP S5742536A JP 11611180 A JP11611180 A JP 11611180A JP 11611180 A JP11611180 A JP 11611180A JP S5742536 A JPS5742536 A JP S5742536A
- Authority
- JP
- Japan
- Prior art keywords
- evaporation
- evaporation source
- conductive film
- transparent conductive
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11611180A JPS5742536A (en) | 1980-08-22 | 1980-08-22 | Preparation of transparent conductive film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11611180A JPS5742536A (en) | 1980-08-22 | 1980-08-22 | Preparation of transparent conductive film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5742536A true JPS5742536A (en) | 1982-03-10 |
Family
ID=14678958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11611180A Pending JPS5742536A (en) | 1980-08-22 | 1980-08-22 | Preparation of transparent conductive film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5742536A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6447851A (en) * | 1987-08-18 | 1989-02-22 | Canon Kk | Formation of thin bismuth-titanate film |
KR100711488B1 (ko) | 2005-12-24 | 2007-04-24 | 주식회사 포스코 | 알루미늄-마그네슘 합금 피막의 제조방법 |
KR100967413B1 (ko) * | 2008-01-21 | 2010-07-01 | 연세대학교 산학협력단 | Ito 도전막, 그 증착방법 및 증착 장치 |
-
1980
- 1980-08-22 JP JP11611180A patent/JPS5742536A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6447851A (en) * | 1987-08-18 | 1989-02-22 | Canon Kk | Formation of thin bismuth-titanate film |
KR100711488B1 (ko) | 2005-12-24 | 2007-04-24 | 주식회사 포스코 | 알루미늄-마그네슘 합금 피막의 제조방법 |
KR100967413B1 (ko) * | 2008-01-21 | 2010-07-01 | 연세대학교 산학협력단 | Ito 도전막, 그 증착방법 및 증착 장치 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Wehner et al. | Angular distribution of sputtered material | |
US4170662A (en) | Plasma plating | |
US6596135B1 (en) | Sputtering target, transparent conductive film, and method for producing the same | |
Chuang | ITO films prepared by long-throw magnetron sputtering without oxygen partial pressure | |
GB1532759A (en) | Production of monocrystalline layers on substrates | |
JPS5742536A (en) | Preparation of transparent conductive film | |
Igasaki et al. | Some properties of Al-doped ZnO transparent conducting films prepared by RF reactive sputtering | |
JPS569249A (en) | Electrically conductive infrared shielding glass and its manufacture | |
JPS5550462A (en) | Preparation of zinc oxide thin film | |
Jiang et al. | Sputtered In2O3: Sn films: Preparation and optical properties | |
JPS5614408A (en) | Manufacture of solid electrolyte | |
JPS5614498A (en) | Manufacture of transparent electrically conductive thin film | |
Kanazawa et al. | Effect of chemical state of doped Sn on the electrical properties of sputtered ITO films | |
JPS5585671A (en) | Sputtering apparatus | |
JPS57123828A (en) | Preparation of transparent conductive film | |
JPS5640282A (en) | Preparation of semiconductor element | |
JPS5558370A (en) | Electrode for sputtering target | |
JPS5767025A (en) | Manufacture of electrically conductive transparent film | |
JPS5435176A (en) | Depositing method by vacuum evaporation | |
JPS5678412A (en) | Preparation of noncrystalline silicone film | |
Lagunas et al. | Reactive Magnetron Sputtering Deposition of Indium-Tin-Oxide Films for Photovoltaic Applications | |
JPS641221A (en) | Manufacture of polarizable electrode | |
JPS5613776A (en) | Preparation of solar cell | |
JPS5742537A (en) | Preparation of transparent electrically-conductive film of indium oxide | |
JPS5490996A (en) | Manufacture for display unit |