JPS5742517A - Preparation of silicon nitride powder - Google Patents
Preparation of silicon nitride powderInfo
- Publication number
- JPS5742517A JPS5742517A JP11882680A JP11882680A JPS5742517A JP S5742517 A JPS5742517 A JP S5742517A JP 11882680 A JP11882680 A JP 11882680A JP 11882680 A JP11882680 A JP 11882680A JP S5742517 A JPS5742517 A JP S5742517A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- silicon nitride
- under reduced
- reduced pressure
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0685—Preparation by carboreductive nitridation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
PURPOSE: To prepare silicon nitride powder giving sintered silicon nitride having high density and strength, by thermally reacting a mixed powder of silica and carbon black under reduced pressure in a furnace, and then heating in a nitriding gas atmosphere.
CONSTITUTION: A mixture obtained by uniformly mixing 1pt.wt. of amorphous silica powder and 0.4W1.0pts.wt. of carbon powder, is heated at 1,200W1,800°C in a furnace under reduced pressure. A part of the mixture is converted to SiC by the process according to the formula I. The reaction product is further reacted in a nitriding gas (nitrogen or ammonia gas) atmosphere at 1,200W1,500°C to obtain Si3N4 powder according to the reaction of formula II. The Si3N4 thus prepared has low SiC content and is almost free of SiO2 and Si2ON2. It can be formed to a dense and high- strength sintered material, which can be used as a heat-resistant structural material such as the engine parts of automobile, aircraft, etc.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11882680A JPS5742517A (en) | 1980-08-27 | 1980-08-27 | Preparation of silicon nitride powder |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11882680A JPS5742517A (en) | 1980-08-27 | 1980-08-27 | Preparation of silicon nitride powder |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5742517A true JPS5742517A (en) | 1982-03-10 |
Family
ID=14746101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11882680A Pending JPS5742517A (en) | 1980-08-27 | 1980-08-27 | Preparation of silicon nitride powder |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5742517A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61183107A (en) * | 1985-02-05 | 1986-08-15 | Natl Inst For Res In Inorg Mater | Preparation of fine powder mixture of silicon nitride and silicon carbide |
-
1980
- 1980-08-27 JP JP11882680A patent/JPS5742517A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61183107A (en) * | 1985-02-05 | 1986-08-15 | Natl Inst For Res In Inorg Mater | Preparation of fine powder mixture of silicon nitride and silicon carbide |
JPH0463006B2 (en) * | 1985-02-05 | 1992-10-08 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho |
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