JPS5734365A - Symmetrical bipolar transistor - Google Patents

Symmetrical bipolar transistor

Info

Publication number
JPS5734365A
JPS5734365A JP8977181A JP8977181A JPS5734365A JP S5734365 A JPS5734365 A JP S5734365A JP 8977181 A JP8977181 A JP 8977181A JP 8977181 A JP8977181 A JP 8977181A JP S5734365 A JPS5734365 A JP S5734365A
Authority
JP
Japan
Prior art keywords
bipolar transistor
symmetrical bipolar
symmetrical
transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8977181A
Other languages
English (en)
Other versions
JPS6150390B2 (ja
Inventor
Raizuman Aanorudo
Jiyosefu Shirubesutori Bikutaa
Deyuannrii Tangu Denii
Kuruto Biidoman Jiikufuriedo
Nien Yu Uwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5734365A publication Critical patent/JPS5734365A/ja
Publication of JPS6150390B2 publication Critical patent/JPS6150390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76248—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using lateral overgrowth techniques, i.e. ELO techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP8977181A 1980-08-08 1981-06-12 Symmetrical bipolar transistor Granted JPS5734365A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17638680A 1980-08-08 1980-08-08

Publications (2)

Publication Number Publication Date
JPS5734365A true JPS5734365A (en) 1982-02-24
JPS6150390B2 JPS6150390B2 (ja) 1986-11-04

Family

ID=22644151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8977181A Granted JPS5734365A (en) 1980-08-08 1981-06-12 Symmetrical bipolar transistor

Country Status (4)

Country Link
EP (1) EP0045848B1 (ja)
JP (1) JPS5734365A (ja)
CA (1) CA1161964A (ja)
DE (1) DE3167300D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952521A (en) * 1985-04-26 1990-08-28 Fujitsu Limited Process for fabricating a semiconductor device with selective growth of a metal silicide

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161867A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体装置
JPS59217364A (ja) * 1983-05-26 1984-12-07 Sony Corp 半導体装置の製法
FR2547954B1 (fr) * 1983-06-21 1985-10-25 Efcis Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice
EP0208795A1 (en) * 1985-07-12 1987-01-21 International Business Machines Corporation Method of fabricating a self-aligned metal-semiconductor FET
GB2179787B (en) * 1985-08-26 1989-09-20 Intel Corp Buried interconnect for mos structure
US4792837A (en) * 1986-02-26 1988-12-20 Ge Solid State Patents, Inc. Orthogonal bipolar transistor
JPH0239340Y2 (ja) * 1986-06-13 1990-10-22
US4860077A (en) * 1987-09-28 1989-08-22 Motorola, Inc. Vertical semiconductor device having a sidewall emitter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1352044A (en) * 1971-04-21 1974-05-15 Garyainov S A Glazkov I M Raik Planar semiconductor device
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation
FR2369652A1 (fr) * 1976-10-29 1978-05-26 Radiotechnique Compelec Memoire morte programmable a transistors
US4098618A (en) * 1977-06-03 1978-07-04 International Business Machines Corporation Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952521A (en) * 1985-04-26 1990-08-28 Fujitsu Limited Process for fabricating a semiconductor device with selective growth of a metal silicide

Also Published As

Publication number Publication date
DE3167300D1 (en) 1985-01-03
EP0045848B1 (en) 1984-11-21
CA1161964A (en) 1984-02-07
EP0045848A1 (en) 1982-02-17
JPS6150390B2 (ja) 1986-11-04

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