JPS5729576A - High frequency sputtering apparatus - Google Patents

High frequency sputtering apparatus

Info

Publication number
JPS5729576A
JPS5729576A JP10311580A JP10311580A JPS5729576A JP S5729576 A JPS5729576 A JP S5729576A JP 10311580 A JP10311580 A JP 10311580A JP 10311580 A JP10311580 A JP 10311580A JP S5729576 A JPS5729576 A JP S5729576A
Authority
JP
Japan
Prior art keywords
target member
crack
sputtering
electrode
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10311580A
Other languages
Japanese (ja)
Inventor
Tadayoshi Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10311580A priority Critical patent/JPS5729576A/en
Publication of JPS5729576A publication Critical patent/JPS5729576A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To enable to prevent sputtering of an electroconductive membr below a target member even if crack is generated in said target member by interposing a member of which a sputtering speed is slower than that of an electrode between the target member and said electrode on which said target member placed. CONSTITUTION:For example, a Cr layer 41 is coated on a lower cylindrical covered electrode made of copper by sputtering and an SiO2 layer is coated thereon. Subsequently, on said SiO2 layer 42, a target member 40 made of an oxide, a nitride or a carbide such as Ta2O3, SiC, MoSi2, TaC, TiC or the like is placed and, further, even if crack is formed in the target member 40, in order to not enlarge said crack, a reinforcing ring 43 is provided therearound. Therefore, even if the crack 40 is generated in the target member 40, because the SiO2 layer is present therebelow, SiO2 is sputtered from a gap of said crack 40, but, because a sputtering speed is slower than that of a metal, the affect thereof can be ingnored.
JP10311580A 1980-07-29 1980-07-29 High frequency sputtering apparatus Pending JPS5729576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10311580A JPS5729576A (en) 1980-07-29 1980-07-29 High frequency sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10311580A JPS5729576A (en) 1980-07-29 1980-07-29 High frequency sputtering apparatus

Publications (1)

Publication Number Publication Date
JPS5729576A true JPS5729576A (en) 1982-02-17

Family

ID=14345589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10311580A Pending JPS5729576A (en) 1980-07-29 1980-07-29 High frequency sputtering apparatus

Country Status (1)

Country Link
JP (1) JPS5729576A (en)

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