JPS572529A - Method of manufacturing high voltage semiconductor device - Google Patents

Method of manufacturing high voltage semiconductor device

Info

Publication number
JPS572529A
JPS572529A JP6680881A JP6680881A JPS572529A JP S572529 A JPS572529 A JP S572529A JP 6680881 A JP6680881 A JP 6680881A JP 6680881 A JP6680881 A JP 6680881A JP S572529 A JPS572529 A JP S572529A
Authority
JP
Japan
Prior art keywords
semiconductor device
high voltage
voltage semiconductor
manufacturing high
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6680881A
Other languages
English (en)
Inventor
Robaato Kuunzu Patoritsuku
Maningu Sabitsuji Neirus Jiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS572529A publication Critical patent/JPS572529A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/905Plural dram cells share common contact or common trench
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/958Passivation layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
JP6680881A 1980-05-05 1981-04-30 Method of manufacturing high voltage semiconductor device Pending JPS572529A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/146,380 US4297149A (en) 1980-05-05 1980-05-05 Method of treating SiPOS passivated high voltage semiconductor device

Publications (1)

Publication Number Publication Date
JPS572529A true JPS572529A (en) 1982-01-07

Family

ID=22517112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6680881A Pending JPS572529A (en) 1980-05-05 1981-04-30 Method of manufacturing high voltage semiconductor device

Country Status (6)

Country Link
US (1) US4297149A (ja)
JP (1) JPS572529A (ja)
DE (1) DE3116998A1 (ja)
IT (1) IT1137677B (ja)
SE (1) SE8102651L (ja)
YU (1) YU108981A (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US4516145A (en) * 1983-08-31 1985-05-07 Storage Technology Partners Reduction of contact resistance in CMOS integrated circuit chips and the product thereof
US4580156A (en) * 1983-12-30 1986-04-01 At&T Bell Laboratories Structured resistive field shields for low-leakage high voltage devices
USH665H (en) 1987-10-19 1989-08-01 Bell Telephone Laboratories, Incorporated Resistive field shields for high voltage devices
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE300472B (ja) * 1965-03-31 1968-04-29 Asea Ab
US3674995A (en) * 1970-08-31 1972-07-04 Texas Instruments Inc Computer controlled device testing and subsequent arbitrary adjustment of device characteristics
JPS523277B2 (ja) * 1973-05-19 1977-01-27
JPS541431B2 (ja) * 1973-12-26 1979-01-24

Also Published As

Publication number Publication date
DE3116998A1 (de) 1982-02-04
US4297149A (en) 1981-10-27
IT1137677B (it) 1986-09-10
IT8120995A0 (it) 1981-04-08
YU108981A (en) 1983-09-30
IT8120995A1 (it) 1982-10-08
SE8102651L (sv) 1981-11-06

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