JPS5721866B2 - - Google Patents

Info

Publication number
JPS5721866B2
JPS5721866B2 JP7824572A JP7824572A JPS5721866B2 JP S5721866 B2 JPS5721866 B2 JP S5721866B2 JP 7824572 A JP7824572 A JP 7824572A JP 7824572 A JP7824572 A JP 7824572A JP S5721866 B2 JPS5721866 B2 JP S5721866B2
Authority
JP
Japan
Prior art keywords
thyristor
main
emitter
auxiliary emitter
broader
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7824572A
Other languages
English (en)
Other versions
JPS4826379A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4826379A publication Critical patent/JPS4826379A/ja
Publication of JPS5721866B2 publication Critical patent/JPS5721866B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
JP7824572A 1971-08-06 1972-08-04 Expired JPS5721866B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712139559 DE2139559B2 (de) 1971-08-06 1971-08-06 Thyristor

Publications (2)

Publication Number Publication Date
JPS4826379A JPS4826379A (ja) 1973-04-06
JPS5721866B2 true JPS5721866B2 (ja) 1982-05-10

Family

ID=5816046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7824572A Expired JPS5721866B2 (ja) 1971-08-06 1972-08-04

Country Status (12)

Country Link
US (1) US3777229A (ja)
JP (1) JPS5721866B2 (ja)
AT (1) AT319402B (ja)
BE (1) BE787241A (ja)
CA (1) CA970477A (ja)
CH (1) CH539951A (ja)
DE (1) DE2139559B2 (ja)
FR (1) FR2148459B1 (ja)
GB (1) GB1342570A (ja)
IT (1) IT963642B (ja)
NL (1) NL7209238A (ja)
SE (1) SE391413B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2356906A1 (de) * 1973-11-14 1975-05-22 Siemens Ag Thyristor
JPS5443686A (en) * 1977-09-14 1979-04-06 Hitachi Ltd Thyristor
PL2819174T3 (pl) 2013-06-24 2017-03-31 Silergy Corp. Tyrystor, metoda wyzwalania tyrystora i obwody tyrystorowe

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
SE335389B (ja) * 1966-10-25 1971-05-24 Asea Ab
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
JPS4722428U (ja) * 1971-03-19 1972-11-13

Also Published As

Publication number Publication date
BE787241A (fr) 1973-02-05
CH539951A (de) 1973-07-31
SE391413B (sv) 1977-02-14
CA970477A (en) 1975-07-01
FR2148459B1 (ja) 1978-01-13
DE2139559B2 (de) 1977-11-03
DE2139559A1 (de) 1973-02-15
US3777229A (en) 1973-12-04
IT963642B (it) 1974-01-21
NL7209238A (ja) 1973-02-08
DE2139559C3 (ja) 1978-06-22
FR2148459A1 (ja) 1973-03-23
GB1342570A (en) 1974-01-03
AT319402B (de) 1974-12-27
JPS4826379A (ja) 1973-04-06

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