CH538198A - Thyristor mit Zündstromverstärkung - Google Patents
Thyristor mit ZündstromverstärkungInfo
- Publication number
- CH538198A CH538198A CH538198DA CH538198A CH 538198 A CH538198 A CH 538198A CH 538198D A CH538198D A CH 538198DA CH 538198 A CH538198 A CH 538198A
- Authority
- CH
- Switzerland
- Prior art keywords
- thyristor
- current amplification
- ignition current
- ignition
- amplification
- Prior art date
Links
- 230000003321 amplification Effects 0.000 title 1
- 238000003199 nucleic acid amplification method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2144617 | 1971-09-15 | ||
DE2146178A DE2146178C3 (de) | 1971-09-15 | 1971-09-15 | Thyristor mit Steuerstromverstärkung |
Publications (1)
Publication Number | Publication Date |
---|---|
CH538198A true CH538198A (de) | 1973-07-31 |
Family
ID=25761696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH538198D CH538198A (de) | 1971-09-15 | 1972-09-13 | Thyristor mit Zündstromverstärkung |
Country Status (5)
Country | Link |
---|---|
US (1) | US3794890A (de) |
CH (1) | CH538198A (de) |
DE (1) | DE2146178C3 (de) |
FR (1) | FR2155942B1 (de) |
GB (1) | GB1359076A (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5532027B2 (de) * | 1973-02-14 | 1980-08-22 | ||
US3896477A (en) * | 1973-11-07 | 1975-07-22 | Jearld L Hutson | Multilayer semiconductor switching devices |
US3918082A (en) * | 1973-11-07 | 1975-11-04 | Jearld L Hutson | Semiconductor switching device |
JPS5718347B2 (de) * | 1974-01-07 | 1982-04-16 | ||
US4217504A (en) * | 1975-08-04 | 1980-08-12 | Licentia-Patent Verwaltungs Gmbh | Semiconductor switch with thyristors |
US4122480A (en) * | 1975-11-05 | 1978-10-24 | Licentia Patent-Verwaltungs-G.M.B.H. | Light fired thyristor with faulty firing protection |
JPS52146570A (en) * | 1976-05-31 | 1977-12-06 | Toshiba Corp | Reverse conducting thyristor |
DE2730612C2 (de) * | 1977-07-07 | 1982-02-04 | Brown, Boveri & Cie Ag, 6800 Mannheim | Betriebsschaltung für einen Thyristor |
CH630491A5 (de) * | 1978-06-15 | 1982-06-15 | Bbc Brown Boveri & Cie | Leistungsthyristor, verfahren zu seiner herstellung und verwendung derartiger thyristoren in stromrichterschaltungen. |
US4261001A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity |
US4261000A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | High voltage semiconductor device having an improved dv/dt capability |
EP0186140B1 (de) * | 1984-12-27 | 1989-09-27 | Siemens Aktiengesellschaft | Halbleiter-Leistungsschalter |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3395320A (en) * | 1965-08-25 | 1968-07-30 | Bell Telephone Labor Inc | Isolation technique for integrated circuit structure |
GB1174899A (en) * | 1966-04-15 | 1969-12-17 | Westinghouse Brake & Signal | Improvements relating to Controllable Rectifier Devices |
US3549961A (en) * | 1968-06-19 | 1970-12-22 | Int Rectifier Corp | Triac structure and method of manufacture |
US3573572A (en) * | 1968-09-23 | 1971-04-06 | Int Rectifier Corp | Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current |
BE758745A (fr) * | 1969-11-10 | 1971-05-10 | Westinghouse Electric Corp | Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs |
US3611066A (en) * | 1969-12-12 | 1971-10-05 | Gen Electric | Thyristor with integrated ballasted gate auxiliary thyristor portion |
JPS501990B1 (de) * | 1970-06-02 | 1975-01-22 |
-
1971
- 1971-09-15 DE DE2146178A patent/DE2146178C3/de not_active Expired
-
1972
- 1972-09-13 FR FR7232386A patent/FR2155942B1/fr not_active Expired
- 1972-09-13 CH CH538198D patent/CH538198A/de not_active IP Right Cessation
- 1972-09-13 GB GB4249072A patent/GB1359076A/en not_active Expired
- 1972-09-14 US US3794890D patent/US3794890A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2146178A1 (de) | 1973-03-22 |
GB1359076A (en) | 1974-07-10 |
US3794890A (en) | 1974-02-26 |
DE2146178B2 (de) | 1979-02-01 |
FR2155942B1 (de) | 1977-12-23 |
FR2155942A1 (de) | 1973-05-25 |
DE2146178C3 (de) | 1979-09-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |