CH538198A - Thyristor mit Zündstromverstärkung - Google Patents

Thyristor mit Zündstromverstärkung

Info

Publication number
CH538198A
CH538198A CH538198DA CH538198A CH 538198 A CH538198 A CH 538198A CH 538198D A CH538198D A CH 538198DA CH 538198 A CH538198 A CH 538198A
Authority
CH
Switzerland
Prior art keywords
thyristor
current amplification
ignition current
ignition
amplification
Prior art date
Application number
Other languages
English (en)
Inventor
Klaus Dipl Ing Weimann
Elmar Dipl Ing Mueller
Joachim Baab Heinz
Pape Juergen
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of CH538198A publication Critical patent/CH538198A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
CH538198D 1971-09-15 1972-09-13 Thyristor mit Zündstromverstärkung CH538198A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2144617 1971-09-15
DE2146178A DE2146178C3 (de) 1971-09-15 1971-09-15 Thyristor mit Steuerstromverstärkung

Publications (1)

Publication Number Publication Date
CH538198A true CH538198A (de) 1973-07-31

Family

ID=25761696

Family Applications (1)

Application Number Title Priority Date Filing Date
CH538198D CH538198A (de) 1971-09-15 1972-09-13 Thyristor mit Zündstromverstärkung

Country Status (5)

Country Link
US (1) US3794890A (de)
CH (1) CH538198A (de)
DE (1) DE2146178C3 (de)
FR (1) FR2155942B1 (de)
GB (1) GB1359076A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532027B2 (de) * 1973-02-14 1980-08-22
US3896477A (en) * 1973-11-07 1975-07-22 Jearld L Hutson Multilayer semiconductor switching devices
US3918082A (en) * 1973-11-07 1975-11-04 Jearld L Hutson Semiconductor switching device
JPS5718347B2 (de) * 1974-01-07 1982-04-16
US4217504A (en) * 1975-08-04 1980-08-12 Licentia-Patent Verwaltungs Gmbh Semiconductor switch with thyristors
US4122480A (en) * 1975-11-05 1978-10-24 Licentia Patent-Verwaltungs-G.M.B.H. Light fired thyristor with faulty firing protection
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
DE2730612C2 (de) * 1977-07-07 1982-02-04 Brown, Boveri & Cie Ag, 6800 Mannheim Betriebsschaltung für einen Thyristor
CH630491A5 (de) * 1978-06-15 1982-06-15 Bbc Brown Boveri & Cie Leistungsthyristor, verfahren zu seiner herstellung und verwendung derartiger thyristoren in stromrichterschaltungen.
US4261001A (en) * 1980-05-23 1981-04-07 General Electric Company Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
EP0186140B1 (de) * 1984-12-27 1989-09-27 Siemens Aktiengesellschaft Halbleiter-Leistungsschalter

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395320A (en) * 1965-08-25 1968-07-30 Bell Telephone Labor Inc Isolation technique for integrated circuit structure
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
US3549961A (en) * 1968-06-19 1970-12-22 Int Rectifier Corp Triac structure and method of manufacture
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
BE758745A (fr) * 1969-11-10 1971-05-10 Westinghouse Electric Corp Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
JPS501990B1 (de) * 1970-06-02 1975-01-22

Also Published As

Publication number Publication date
DE2146178A1 (de) 1973-03-22
GB1359076A (en) 1974-07-10
US3794890A (en) 1974-02-26
DE2146178B2 (de) 1979-02-01
FR2155942B1 (de) 1977-12-23
FR2155942A1 (de) 1973-05-25
DE2146178C3 (de) 1979-09-27

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Legal Events

Date Code Title Description
PL Patent ceased