JPS57211238A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57211238A
JPS57211238A JP9625981A JP9625981A JPS57211238A JP S57211238 A JPS57211238 A JP S57211238A JP 9625981 A JP9625981 A JP 9625981A JP 9625981 A JP9625981 A JP 9625981A JP S57211238 A JPS57211238 A JP S57211238A
Authority
JP
Japan
Prior art keywords
film
thickness
semiconductor
substrate
atomic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9625981A
Other languages
Japanese (ja)
Other versions
JPH0328055B2 (en
Inventor
Masaki Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9625981A priority Critical patent/JPS57211238A/en
Publication of JPS57211238A publication Critical patent/JPS57211238A/en
Publication of JPH0328055B2 publication Critical patent/JPH0328055B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To enable to obtain an MIS structural semiconductor device having extremely low density of interfacial surface level by a method wherein between a semiconductor substrate consisting of the III-V group compound semiconductor and an insulating film, a semiconductor layer being different from the semiconductor thereof and having the prescribed film thickness is inserted. CONSTITUTION:The Si film 2 having thidkness of 1-5 atomic layer is provided comingin contact with the substrate 1 consisting of the III-V group compound semiconductor, GaAs for example, and the insulating film 3 consisting of Si oxide is provided coming in contact with the film 2. The discrepancy of lattice constants between GaAs and Si is about 4%, and when thickness of the Si film 2 to be adhered exceeds thickness of 5 atomic layer, an unpaired junction is formed in the interface between the substrate 1 and the film 2 to generate the surface state. While when thickness thereof is less than thickness of 5 atomic layer, by generation of distortion in the lattice of Si, the unpaired junction is not generated in the interface. Moreover the favorable interface can be obtained between the film 2 and the film 3, and low density of the surface state of 10<11>cm<-2> or less can be realized. While for prevention of defect formation in the surface of the substrate 1, it is necessary to cover with the film 2 being at least one atomic layer or more.
JP9625981A 1981-06-22 1981-06-22 Semiconductor device Granted JPS57211238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9625981A JPS57211238A (en) 1981-06-22 1981-06-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9625981A JPS57211238A (en) 1981-06-22 1981-06-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57211238A true JPS57211238A (en) 1982-12-25
JPH0328055B2 JPH0328055B2 (en) 1991-04-17

Family

ID=14160185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9625981A Granted JPS57211238A (en) 1981-06-22 1981-06-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57211238A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119869A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Semiconductor device
JPS59127839A (en) * 1983-01-11 1984-07-23 Nec Corp Inactivation of surface of iv-v group element compound semiconductor
JPS59172728A (en) * 1983-03-22 1984-09-29 Fujitsu Ltd Semiconductor device
EP0250161A2 (en) * 1986-06-18 1987-12-23 AT&T Corp. Method of manufacturing devices including a semiconductor/dielectric interface
JPS63274176A (en) * 1987-05-06 1988-11-11 Seiko Instr & Electronics Ltd Insulated-gate field-effect transistor
JPH0226073A (en) * 1988-06-15 1990-01-29 Internatl Business Mach Corp <Ibm> Manufacture of compound semiconductor device, compound semiconductor device and field effect transistor
JP2006173574A (en) * 2004-10-13 2006-06-29 Interuniv Micro Electronica Centrum Vzw Method of making inactivated semiconductor substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513956A (en) * 1978-07-17 1980-01-31 Nec Corp Insulation film forming method for compound semiconductor
JPS5671943A (en) * 1979-11-16 1981-06-15 Oki Electric Ind Co Ltd Oxide film coating of compound semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513956A (en) * 1978-07-17 1980-01-31 Nec Corp Insulation film forming method for compound semiconductor
JPS5671943A (en) * 1979-11-16 1981-06-15 Oki Electric Ind Co Ltd Oxide film coating of compound semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119869A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Semiconductor device
JPS59127839A (en) * 1983-01-11 1984-07-23 Nec Corp Inactivation of surface of iv-v group element compound semiconductor
JPS59172728A (en) * 1983-03-22 1984-09-29 Fujitsu Ltd Semiconductor device
EP0250161A2 (en) * 1986-06-18 1987-12-23 AT&T Corp. Method of manufacturing devices including a semiconductor/dielectric interface
JPS63274176A (en) * 1987-05-06 1988-11-11 Seiko Instr & Electronics Ltd Insulated-gate field-effect transistor
JPH0226073A (en) * 1988-06-15 1990-01-29 Internatl Business Mach Corp <Ibm> Manufacture of compound semiconductor device, compound semiconductor device and field effect transistor
JP2006173574A (en) * 2004-10-13 2006-06-29 Interuniv Micro Electronica Centrum Vzw Method of making inactivated semiconductor substrate

Also Published As

Publication number Publication date
JPH0328055B2 (en) 1991-04-17

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