JPS57211237A - Plasma reaction device - Google Patents

Plasma reaction device

Info

Publication number
JPS57211237A
JPS57211237A JP9535481A JP9535481A JPS57211237A JP S57211237 A JPS57211237 A JP S57211237A JP 9535481 A JP9535481 A JP 9535481A JP 9535481 A JP9535481 A JP 9535481A JP S57211237 A JPS57211237 A JP S57211237A
Authority
JP
Japan
Prior art keywords
plasma
electrode
diffusion plate
gas
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9535481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410933B2 (enrdf_load_stackoverflow
Inventor
Masakuni Akiba
Hiroto Nagatomo
Kazuhiko Yonemitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP9535481A priority Critical patent/JPS57211237A/ja
Publication of JPS57211237A publication Critical patent/JPS57211237A/ja
Publication of JPS6410933B2 publication Critical patent/JPS6410933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP9535481A 1981-06-22 1981-06-22 Plasma reaction device Granted JPS57211237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9535481A JPS57211237A (en) 1981-06-22 1981-06-22 Plasma reaction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9535481A JPS57211237A (en) 1981-06-22 1981-06-22 Plasma reaction device

Publications (2)

Publication Number Publication Date
JPS57211237A true JPS57211237A (en) 1982-12-25
JPS6410933B2 JPS6410933B2 (enrdf_load_stackoverflow) 1989-02-22

Family

ID=14135316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9535481A Granted JPS57211237A (en) 1981-06-22 1981-06-22 Plasma reaction device

Country Status (1)

Country Link
JP (1) JPS57211237A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239015A (ja) * 1984-05-11 1985-11-27 Toyobo Co Ltd アモルフアスシリコン膜の形成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250015340A1 (en) * 2021-06-01 2025-01-09 Lg Energy Solution, Ltd. All-solid lithium secondary battery and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467377A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Plasma processing apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467377A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Plasma processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239015A (ja) * 1984-05-11 1985-11-27 Toyobo Co Ltd アモルフアスシリコン膜の形成方法

Also Published As

Publication number Publication date
JPS6410933B2 (enrdf_load_stackoverflow) 1989-02-22

Similar Documents

Publication Publication Date Title
JPS55124235A (en) Plasma generation method
JPS5531154A (en) Plasma etching apparatus
JPS556487A (en) Detonating gas producer
JPS57211237A (en) Plasma reaction device
JPS5751290A (en) Electrolytic treatment of beltlike metallic plate
IL78822A0 (en) Solar cells on the basis of cuins2
JPS57208077A (en) Fuel cell
JPS53143170A (en) Condenser type gas plasma treating apparatus
JPS5534431A (en) Method of treating semiconductor element
US3671320A (en) Battery plate treatment process
JPS5530827A (en) Plasmaetching device
JPS5492534A (en) Plasma treating device
JPS57178350A (en) Liquid cooling type thyristor valve
JPS5756923A (en) Manufacture of thin film
JPS55162339A (en) Plasma treating device
JPS5711806A (en) Ozonizer
JPS57143821A (en) Method and apparatus for ion plating
JPS54109391A (en) Etching method
JPS56142894A (en) Radial cell for plate passing through type plating of strip
JPS57121234A (en) Plasma processing and device thereof
JPS5468169A (en) Plasma processor of capacitor type
JPS5357988A (en) Photovoltaic cell
JPS5384585A (en) Solar cell
JPS5740932A (en) Device for plasma processing
JPS5719377A (en) Plasma treating device