JPS5721107A - Transistor amplifier - Google Patents

Transistor amplifier

Info

Publication number
JPS5721107A
JPS5721107A JP9526580A JP9526580A JPS5721107A JP S5721107 A JPS5721107 A JP S5721107A JP 9526580 A JP9526580 A JP 9526580A JP 9526580 A JP9526580 A JP 9526580A JP S5721107 A JPS5721107 A JP S5721107A
Authority
JP
Japan
Prior art keywords
emitter
potential
current
inverted
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9526580A
Other languages
Japanese (ja)
Inventor
Yutaka Horiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9526580A priority Critical patent/JPS5721107A/en
Publication of JPS5721107A publication Critical patent/JPS5721107A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To decrease the capacity of emitter biasing power, by by-passing the emitter current on and after the emitter potential of a base common high frequency transistor (TR) is inverted to an opposite potential to the base potential, with the 2nd transistor.
CONSTITUTION: If a high frequency input is less, since the collector voltage of a TR13 is in an opposite potential, no current flows to the TR13. On the other hand, when the high freuquency input increases, the emitter current of a TR1 is increased, the emitter voltage VE at point A close to zero from a negative potential through the voltage drop across a resistor 8 and is inverted to a positive potential. After that, the emitter current further increased is by-passed through the TR13. This current does not become a load for an emitter bias power supply 12. The power supply 12 can be reduced for the capacity for the power loss' share, allowing to increase the overall efficiency of the amplifier.
COPYRIGHT: (C)1982,JPO&Japio
JP9526580A 1980-07-12 1980-07-12 Transistor amplifier Pending JPS5721107A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9526580A JPS5721107A (en) 1980-07-12 1980-07-12 Transistor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9526580A JPS5721107A (en) 1980-07-12 1980-07-12 Transistor amplifier

Publications (1)

Publication Number Publication Date
JPS5721107A true JPS5721107A (en) 1982-02-03

Family

ID=14132929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9526580A Pending JPS5721107A (en) 1980-07-12 1980-07-12 Transistor amplifier

Country Status (1)

Country Link
JP (1) JPS5721107A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153613A (en) * 1984-01-23 1985-08-13 Maspro Denkoh Corp Microwave amplifier circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153613A (en) * 1984-01-23 1985-08-13 Maspro Denkoh Corp Microwave amplifier circuit

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