JPS57208157A - Dicing method - Google Patents

Dicing method

Info

Publication number
JPS57208157A
JPS57208157A JP9303281A JP9303281A JPS57208157A JP S57208157 A JPS57208157 A JP S57208157A JP 9303281 A JP9303281 A JP 9303281A JP 9303281 A JP9303281 A JP 9303281A JP S57208157 A JPS57208157 A JP S57208157A
Authority
JP
Japan
Prior art keywords
wafer
dusts
adhered
ultraviolet ray
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9303281A
Other languages
Japanese (ja)
Inventor
Takashi Tsumagari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9303281A priority Critical patent/JPS57208157A/en
Publication of JPS57208157A publication Critical patent/JPS57208157A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent dusts caused by charging from adhering to the surface of a semiconductor wafer by emitting an ultraviolet ray to the surface of a semiconductor wafer, to which the dusts are adhered to the surface by dicing and cleaning it. CONSTITUTION:A diamond blade 6 is rotated at a high speed, an adsorption table 10 is simultaneously moved by a drive mechanism in a direction of an arrow A, and a notch of the prescribed amount is formed at a wafer 8. When the wafer 8 is moved to the position directly under an ultraviolet illumination lamp 12 by the reciprocation of the table 10, the surface of the wafer 8 is sequentially emitted with the ultraviolet ray. Thus, charge stored on the surface of the wafer 8 is flowed as a photocurrent to the side of the substrate oppositely to the surface, to which the dusts are adhered, and the charging state of the surface of the wafer 8, to which the dusts are adhered, is removed.
JP9303281A 1981-06-18 1981-06-18 Dicing method Pending JPS57208157A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9303281A JPS57208157A (en) 1981-06-18 1981-06-18 Dicing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9303281A JPS57208157A (en) 1981-06-18 1981-06-18 Dicing method

Publications (1)

Publication Number Publication Date
JPS57208157A true JPS57208157A (en) 1982-12-21

Family

ID=14071150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9303281A Pending JPS57208157A (en) 1981-06-18 1981-06-18 Dicing method

Country Status (1)

Country Link
JP (1) JPS57208157A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0314258A (en) * 1989-06-13 1991-01-22 Fujitsu Ltd Manufacture of semiconductor device
WO2018056085A1 (en) * 2016-09-21 2018-03-29 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0314258A (en) * 1989-06-13 1991-01-22 Fujitsu Ltd Manufacture of semiconductor device
WO2018056085A1 (en) * 2016-09-21 2018-03-29 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JPWO2018056085A1 (en) * 2016-09-21 2019-06-27 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
TWI736670B (en) * 2016-09-21 2021-08-21 日商東京威力科創股份有限公司 Substrate processing method and substrate processing device
US11538679B2 (en) 2016-09-21 2022-12-27 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

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