JPS57207556A - Electric dust collector - Google Patents

Electric dust collector

Info

Publication number
JPS57207556A
JPS57207556A JP56090652A JP9065281A JPS57207556A JP S57207556 A JPS57207556 A JP S57207556A JP 56090652 A JP56090652 A JP 56090652A JP 9065281 A JP9065281 A JP 9065281A JP S57207556 A JPS57207556 A JP S57207556A
Authority
JP
Japan
Prior art keywords
sides
parts
electrode
insulating
plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56090652A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6344018B2 (enExample
Inventor
Akio Takeaji
Sadaichi Nabeta
Kazuyoshi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP56090652A priority Critical patent/JPS57207556A/ja
Priority to FR8209135A priority patent/FR2506989B1/fr
Publication of JPS57207556A publication Critical patent/JPS57207556A/ja
Publication of JPS6344018B2 publication Critical patent/JPS6344018B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H10D64/01346—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic Separation (AREA)
  • Semiconductor Memories (AREA)
JP56090652A 1981-06-12 1981-06-12 Electric dust collector Granted JPS57207556A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56090652A JPS57207556A (en) 1981-06-12 1981-06-12 Electric dust collector
FR8209135A FR2506989B1 (fr) 1981-06-12 1982-05-26 Dispositif de memoire a semi-conducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56090652A JPS57207556A (en) 1981-06-12 1981-06-12 Electric dust collector

Publications (2)

Publication Number Publication Date
JPS57207556A true JPS57207556A (en) 1982-12-20
JPS6344018B2 JPS6344018B2 (enExample) 1988-09-02

Family

ID=14004443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56090652A Granted JPS57207556A (en) 1981-06-12 1981-06-12 Electric dust collector

Country Status (2)

Country Link
JP (1) JPS57207556A (enExample)
FR (1) FR2506989B1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01174057U (enExample) * 1988-05-30 1989-12-11
JPH01174056U (enExample) * 1988-05-30 1989-12-11
CN107185713A (zh) * 2017-06-15 2017-09-22 韦彩丽 一种家用静电除尘装饰用品

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2815605C3 (de) * 1978-04-11 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher mit Ansteuerleitungen hoher Leitfähigkeit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01174057U (enExample) * 1988-05-30 1989-12-11
JPH01174056U (enExample) * 1988-05-30 1989-12-11
CN107185713A (zh) * 2017-06-15 2017-09-22 韦彩丽 一种家用静电除尘装饰用品

Also Published As

Publication number Publication date
JPS6344018B2 (enExample) 1988-09-02
FR2506989A1 (fr) 1982-12-03
FR2506989B1 (fr) 1985-06-21

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