JPS57206026A - Defect correcting method of photomask - Google Patents

Defect correcting method of photomask

Info

Publication number
JPS57206026A
JPS57206026A JP8954381A JP8954381A JPS57206026A JP S57206026 A JPS57206026 A JP S57206026A JP 8954381 A JP8954381 A JP 8954381A JP 8954381 A JP8954381 A JP 8954381A JP S57206026 A JPS57206026 A JP S57206026A
Authority
JP
Japan
Prior art keywords
defect portion
photomask
noble metal
pattern
light shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8954381A
Other languages
Japanese (ja)
Inventor
Masaaki Okunaka
Takeoki Miyauchi
Mikio Hongo
Katsuro Mizukoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8954381A priority Critical patent/JPS57206026A/en
Publication of JPS57206026A publication Critical patent/JPS57206026A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To improve adhesive property between a deposition film and a photomask substrate, light shielding prpoerty and chamical resistance, by a method wherein metal complex of noble metal and solution of organic solvent including organic silicon compound as main constituent are applied, and laser ray is irradiated on pattern defect portion. CONSTITUTION:Metal complex of noble metal such as palladium, iridium or platinum and solution of organic solvent including organic silicon compound as main constituent are applied to pattern side of a photomask including defect portion. Laser ray is irradiated locally to part covering the pattern defect portion. Thereby a light shielding film, where particles of noble metal are buried in silicon oxide with excellent acid resistance, is deposited on the pattern defect portion and the defect portion is corrected.
JP8954381A 1981-06-12 1981-06-12 Defect correcting method of photomask Pending JPS57206026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8954381A JPS57206026A (en) 1981-06-12 1981-06-12 Defect correcting method of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8954381A JPS57206026A (en) 1981-06-12 1981-06-12 Defect correcting method of photomask

Publications (1)

Publication Number Publication Date
JPS57206026A true JPS57206026A (en) 1982-12-17

Family

ID=13973725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8954381A Pending JPS57206026A (en) 1981-06-12 1981-06-12 Defect correcting method of photomask

Country Status (1)

Country Link
JP (1) JPS57206026A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4510222A (en) * 1982-05-24 1985-04-09 Hitachi, Ltd. Photomask with corrected white defects
US10263092B2 (en) * 2017-06-30 2019-04-16 Boe Technology Group Co., Ltd. Thin film transistor, method for manufacturing the same, array substrate and display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4510222A (en) * 1982-05-24 1985-04-09 Hitachi, Ltd. Photomask with corrected white defects
US10263092B2 (en) * 2017-06-30 2019-04-16 Boe Technology Group Co., Ltd. Thin film transistor, method for manufacturing the same, array substrate and display device

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