JPS5720007A - Direct-current biasing circuit for field effect transistor - Google Patents

Direct-current biasing circuit for field effect transistor

Info

Publication number
JPS5720007A
JPS5720007A JP9474380A JP9474380A JPS5720007A JP S5720007 A JPS5720007 A JP S5720007A JP 9474380 A JP9474380 A JP 9474380A JP 9474380 A JP9474380 A JP 9474380A JP S5720007 A JPS5720007 A JP S5720007A
Authority
JP
Japan
Prior art keywords
biasing circuit
direct
field effect
effect transistor
current biasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9474380A
Other languages
Japanese (ja)
Inventor
Yoshinori Fujiki
Sachiro Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9474380A priority Critical patent/JPS5720007A/en
Publication of JPS5720007A publication Critical patent/JPS5720007A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To reduce power consumption without varying the power voltage of an electronic equipment, by connecting ≥2 FETs in series in terms of direct current.
CONSTITUTION: A unit biasing circuit composed of an FET1 and a variable resistor 2 and another unit biasing circuit composed of an FET1' and a variable resistor 2' are connected in series. In this constitution, a current flowing through each circuit is as much as that flowing through one FET, and the power consumption is reduced to half. In addition, even when three FETs are used, the circuit is constituted similarly.
COPYRIGHT: (C)1982,JPO&Japio
JP9474380A 1980-07-11 1980-07-11 Direct-current biasing circuit for field effect transistor Pending JPS5720007A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9474380A JPS5720007A (en) 1980-07-11 1980-07-11 Direct-current biasing circuit for field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9474380A JPS5720007A (en) 1980-07-11 1980-07-11 Direct-current biasing circuit for field effect transistor

Publications (1)

Publication Number Publication Date
JPS5720007A true JPS5720007A (en) 1982-02-02

Family

ID=14118598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9474380A Pending JPS5720007A (en) 1980-07-11 1980-07-11 Direct-current biasing circuit for field effect transistor

Country Status (1)

Country Link
JP (1) JPS5720007A (en)

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