JPS57199273A - Light wave detector - Google Patents

Light wave detector

Info

Publication number
JPS57199273A
JPS57199273A JP8480981A JP8480981A JPS57199273A JP S57199273 A JPS57199273 A JP S57199273A JP 8480981 A JP8480981 A JP 8480981A JP 8480981 A JP8480981 A JP 8480981A JP S57199273 A JPS57199273 A JP S57199273A
Authority
JP
Japan
Prior art keywords
semiconductor
laser
light
light wave
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8480981A
Other languages
Japanese (ja)
Other versions
JPH0230598B2 (en
Inventor
Junichi Nishizawa
Ken Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Original Assignee
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI KENKIYUU SHINKOUKAI, Semiconductor Research Foundation filed Critical HANDOUTAI KENKIYUU SHINKOUKAI
Priority to JP8480981A priority Critical patent/JPS57199273A/en
Publication of JPS57199273A publication Critical patent/JPS57199273A/en
Publication of JPH0230598B2 publication Critical patent/JPH0230598B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To convert the light wave signals into the intermediate frequency band efficiently by a method wherein the semiconductor Raman laser or the semiconductor Brillouin laser are utilized as a part of the light wave signals. CONSTITUTION:The light mixer 3 mixes the input light wave 2 and the light from the local light oscillator 1 to fetch the intermediate wave output 7 (frequency DELTAomega). The semiconductor Rama laser or the semiconductor Brillouin laser are utilized as the local oscillator 1 i.e., the output of the exciting laser 5 with frequency of omega0 is added to the semiconductor to obtain the oscillating frequency of omega0-DELTAomega. Besides the light mixer makes use of the compound semiconductor mixed crystal, semiconductor Raman laser or semiconductor Brillouin laser to improve the mixing efficiency.
JP8480981A 1981-06-01 1981-06-01 Light wave detector Granted JPS57199273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8480981A JPS57199273A (en) 1981-06-01 1981-06-01 Light wave detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8480981A JPS57199273A (en) 1981-06-01 1981-06-01 Light wave detector

Publications (2)

Publication Number Publication Date
JPS57199273A true JPS57199273A (en) 1982-12-07
JPH0230598B2 JPH0230598B2 (en) 1990-07-06

Family

ID=13841042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8480981A Granted JPS57199273A (en) 1981-06-01 1981-06-01 Light wave detector

Country Status (1)

Country Link
JP (1) JPS57199273A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0522230A (en) * 1991-07-16 1993-01-29 Res Dev Corp Of Japan Optical demodulator
JP2005175409A (en) * 2003-12-05 2005-06-30 Semiconductor Res Found Method and apparatus for terahertz electromagnetic-wave irradiation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495292A (en) * 1972-04-28 1974-01-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495292A (en) * 1972-04-28 1974-01-17

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0522230A (en) * 1991-07-16 1993-01-29 Res Dev Corp Of Japan Optical demodulator
JP2005175409A (en) * 2003-12-05 2005-06-30 Semiconductor Res Found Method and apparatus for terahertz electromagnetic-wave irradiation

Also Published As

Publication number Publication date
JPH0230598B2 (en) 1990-07-06

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