JPS57199218A - Morecular beam epitaxial growth equipment - Google Patents

Morecular beam epitaxial growth equipment

Info

Publication number
JPS57199218A
JPS57199218A JP56085233A JP8523381A JPS57199218A JP S57199218 A JPS57199218 A JP S57199218A JP 56085233 A JP56085233 A JP 56085233A JP 8523381 A JP8523381 A JP 8523381A JP S57199218 A JPS57199218 A JP S57199218A
Authority
JP
Japan
Prior art keywords
chamber
growth
substrate
cassette
molecular beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56085233A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241164B2 (enExample
Inventor
Ryoji Okata
Kazuo Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56085233A priority Critical patent/JPS57199218A/ja
Publication of JPS57199218A publication Critical patent/JPS57199218A/ja
Publication of JPH0241164B2 publication Critical patent/JPH0241164B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/22

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP56085233A 1981-06-01 1981-06-01 Morecular beam epitaxial growth equipment Granted JPS57199218A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56085233A JPS57199218A (en) 1981-06-01 1981-06-01 Morecular beam epitaxial growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56085233A JPS57199218A (en) 1981-06-01 1981-06-01 Morecular beam epitaxial growth equipment

Publications (2)

Publication Number Publication Date
JPS57199218A true JPS57199218A (en) 1982-12-07
JPH0241164B2 JPH0241164B2 (enExample) 1990-09-14

Family

ID=13852839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56085233A Granted JPS57199218A (en) 1981-06-01 1981-06-01 Morecular beam epitaxial growth equipment

Country Status (1)

Country Link
JP (1) JPS57199218A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097621A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd 分子線エピタキシ装置における基板搬送装置
JPS60117615A (ja) * 1983-11-30 1985-06-25 Hitachi Ltd 分子線エピタキシ装置
JPS60117614A (ja) * 1983-11-30 1985-06-25 Hitachi Ltd 分子線エピタキシ装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097621A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd 分子線エピタキシ装置における基板搬送装置
JPS60117615A (ja) * 1983-11-30 1985-06-25 Hitachi Ltd 分子線エピタキシ装置
JPS60117614A (ja) * 1983-11-30 1985-06-25 Hitachi Ltd 分子線エピタキシ装置

Also Published As

Publication number Publication date
JPH0241164B2 (enExample) 1990-09-14

Similar Documents

Publication Publication Date Title
DE3672427D1 (de) Verfahren und vorrichtung zur abscheidung eines duennen filmes.
AU1430683A (en) Photochemical vapour deposition method and apparatus
AU3058789A (en) Method for obtaining transverse uniformity during thin film deposition on extended substrate
IE830782L (en) Deposition apparatus.
CA2075803A1 (en) Method and apparatus for photographic processing
BE883632A (fr) Procede et appareil de pulverisation de matiere sur un substrat a l'arc plasma.
TW347416B (en) Post treatment method for in-situ cleaning
BE893064A (fr) Procede et appareil de production d'un plasma gazeux active, et procede et appareil pour deposer de facon reactive un revetement en couches minces sur un substrat
JPS5210869A (en) Thin film forming method
JPS57199218A (en) Morecular beam epitaxial growth equipment
DE69838937D1 (de) Magnetronsputtervorrichtung in form eines bleches
GB2260341B (en) Process for the selective deposition of thin diamond film by chemical vapour deposition
TW429271B (en) Introducing process fluid over rotating substrates
DE3664793D1 (en) Chemical vapor deposition method for the thin film of semiconductor
GB8817859D0 (en) Method of coating thin liquid film on solid surface & apparatus for same
JPS51114120A (en) Photographic material
GR3029503T3 (en) Method and apparatus for coating a substrate by sputtering.
JPS5422168A (en) Glass coating method for semiconductor element
JPS6431967A (en) Manufacture of thin film
JPS55124232A (en) Application method of substrate treatment solution and the device therefor
JPS6417865A (en) Substrate-holding mechanism in equipment for thin film manufacture
JPS54866A (en) Molecular beam crystal growing device
JPS57200560A (en) Vessel for source of vaporization for vacuum deposition
EP0138515A3 (en) An apparatus for use in manufacturing a perpendicular magnetic recording member
JPS5750407A (en) Coating material for thermally treating magnetic garnet epitaxial film