JPS57194535A - Electrolytic processing for semiconductor substrate - Google Patents

Electrolytic processing for semiconductor substrate

Info

Publication number
JPS57194535A
JPS57194535A JP56080309A JP8030981A JPS57194535A JP S57194535 A JPS57194535 A JP S57194535A JP 56080309 A JP56080309 A JP 56080309A JP 8030981 A JP8030981 A JP 8030981A JP S57194535 A JPS57194535 A JP S57194535A
Authority
JP
Japan
Prior art keywords
oxide film
semiconductor substrate
electrolytic processing
windows
anodic oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56080309A
Other languages
Japanese (ja)
Inventor
Toru Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56080309A priority Critical patent/JPS57194535A/en
Publication of JPS57194535A publication Critical patent/JPS57194535A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To uniformly form an anodic oxide film by a method wherein a semiconductor substrate is contacted to one of the windows provided on the conductive member that was covered by an insulating film having two windows, and an electrolytic processing is performed by connecting a lead wire, linking with the anode, to the other window. CONSTITUTION:A thermal oxide film is formed on an Si substrate 11, two windows are formed, an Au-Si alloy layer is provided on the exposed surface which will be used as a contact section 13, a compound semiconductor substrate 14 is contacted to one of the contact sections. Then, a lead wire which is linking with the anode-side electrode of a DC power source 19 is connected to the other contact section, an electrolytic processing is performed by dipping the above in an electrolyte 17 together with a cathode electrode plate 18, and an anodic oxide film is formed. Accordingly, a uniform anodic oxide film can be formed, and the adhesion of dust on the surface of the substrate can also be prevented.
JP56080309A 1981-05-25 1981-05-25 Electrolytic processing for semiconductor substrate Pending JPS57194535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56080309A JPS57194535A (en) 1981-05-25 1981-05-25 Electrolytic processing for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56080309A JPS57194535A (en) 1981-05-25 1981-05-25 Electrolytic processing for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS57194535A true JPS57194535A (en) 1982-11-30

Family

ID=13714664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56080309A Pending JPS57194535A (en) 1981-05-25 1981-05-25 Electrolytic processing for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS57194535A (en)

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