JPS57183313A - Preparation of silicon carbide - Google Patents

Preparation of silicon carbide

Info

Publication number
JPS57183313A
JPS57183313A JP56069081A JP6908181A JPS57183313A JP S57183313 A JPS57183313 A JP S57183313A JP 56069081 A JP56069081 A JP 56069081A JP 6908181 A JP6908181 A JP 6908181A JP S57183313 A JPS57183313 A JP S57183313A
Authority
JP
Japan
Prior art keywords
compound
reaction
silicic acid
ions
acid ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56069081A
Other languages
Japanese (ja)
Inventor
Kichizo Inomata
Masami Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Research in Inorganic Material
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP56069081A priority Critical patent/JPS57183313A/en
Publication of JPS57183313A publication Critical patent/JPS57183313A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To prepare microcrystalline SiC at a low temperature, by reacting a compound having an acetylenic triple bond or a mixture thereof with a compound having a CN group with a silicic acid ions in a neutral or alkaline aqueous solution.
CONSTITUTION: A compound having an acetylenic triple bond, e.g. an organic compound such as C2H2, a metallic acethylide or methylacetylene, or a mixture thereof with a compound having a CN group, e.g. (CN)2, HCN, KCN a cyano complex compound, a thiocyanic acid and a salt thereof, is reacted with silicic acid ions, e.g. SiO2, capable of forming the silicic acid ions in an aqueous solution of an alkali. In the reaction, a nucleation promotor, e.g. SiC, is added thereto or polyvalent transition metallic ions, e.g. Ti, are present to accelerate the crystallization. The reaction proceeds at room temperature W110°C under ordinary pressure, and CO or CO2 gas formed by the reaction is taken out of the reaction system.
COPYRIGHT: (C)1982,JPO&Japio
JP56069081A 1981-05-08 1981-05-08 Preparation of silicon carbide Pending JPS57183313A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56069081A JPS57183313A (en) 1981-05-08 1981-05-08 Preparation of silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56069081A JPS57183313A (en) 1981-05-08 1981-05-08 Preparation of silicon carbide

Publications (1)

Publication Number Publication Date
JPS57183313A true JPS57183313A (en) 1982-11-11

Family

ID=13392275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56069081A Pending JPS57183313A (en) 1981-05-08 1981-05-08 Preparation of silicon carbide

Country Status (1)

Country Link
JP (1) JPS57183313A (en)

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