JPS57182956A - Ion-implantation device - Google Patents

Ion-implantation device

Info

Publication number
JPS57182956A
JPS57182956A JP56068779A JP6877981A JPS57182956A JP S57182956 A JPS57182956 A JP S57182956A JP 56068779 A JP56068779 A JP 56068779A JP 6877981 A JP6877981 A JP 6877981A JP S57182956 A JPS57182956 A JP S57182956A
Authority
JP
Japan
Prior art keywords
magnet
scanned
separating
ion beams
deflecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56068779A
Other languages
English (en)
Inventor
Toshimichi Taya
Mitsuo Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56068779A priority Critical patent/JPS57182956A/ja
Priority to US06/374,873 priority patent/US4476393A/en
Publication of JPS57182956A publication Critical patent/JPS57182956A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP56068779A 1981-05-07 1981-05-07 Ion-implantation device Pending JPS57182956A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56068779A JPS57182956A (en) 1981-05-07 1981-05-07 Ion-implantation device
US06/374,873 US4476393A (en) 1981-05-07 1982-05-04 Ion implantation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56068779A JPS57182956A (en) 1981-05-07 1981-05-07 Ion-implantation device

Publications (1)

Publication Number Publication Date
JPS57182956A true JPS57182956A (en) 1982-11-11

Family

ID=13383553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56068779A Pending JPS57182956A (en) 1981-05-07 1981-05-07 Ion-implantation device

Country Status (2)

Country Link
US (1) US4476393A (ja)
JP (1) JPS57182956A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6396855A (ja) * 1986-10-13 1988-04-27 Hitachi Ltd イオン打込方法及びイオン打込装置
JPH01500310A (ja) * 1986-04-09 1989-02-02 イクリプス・イオン・テクノロジー・インコーポレイテッド イオンビーム走査方法および装置
CN106920741A (zh) * 2015-12-10 2017-07-04 住友重机械离子技术有限公司 离子注入方法及离子注入装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890002747B1 (ko) * 1983-11-07 1989-07-26 가부시기가이샤 히다찌세이사꾸쇼 이온 빔에 의한 성막방법 및 그 장치
AU578707B2 (en) * 1985-05-17 1988-11-03 Air Products And Chemicals Inc. Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source
US4922106A (en) * 1986-04-09 1990-05-01 Varian Associates, Inc. Ion beam scanning method and apparatus
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4835399A (en) * 1986-08-22 1989-05-30 Hitachi, Ltd. Charged particle beam apparatus
US4745281A (en) * 1986-08-25 1988-05-17 Eclipse Ion Technology, Inc. Ion beam fast parallel scanning having dipole magnetic lens with nonuniform field
JP3034009B2 (ja) * 1990-10-22 2000-04-17 株式会社日立製作所 イオン打込み装置
US5554853A (en) * 1995-03-10 1996-09-10 Krytek Corporation Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
US5981961A (en) * 1996-03-15 1999-11-09 Applied Materials, Inc. Apparatus and method for improved scanning efficiency in an ion implanter
US6677599B2 (en) * 2000-03-27 2004-01-13 Applied Materials, Inc. System and method for uniformly implanting a wafer with an ion beam
WO2001099144A2 (en) 2000-06-22 2001-12-27 Proteros, Llc Ion implantation uniformity correction using beam current control
US20100263133A1 (en) * 2009-04-21 2010-10-21 Timothy Langan Multi-purpose tool
ES2404812T3 (es) * 2009-05-14 2013-05-29 Abb Technology Ag Procedimiento de fabricación de un arrollamiento de discos
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
USD744169S1 (en) 2013-09-05 2015-11-24 SERE Industries Inc. Helmet counterweight shovel head

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778626A (en) * 1972-07-28 1973-12-11 Western Electric Co Mechanical scan system for ion implantation
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
US4367411A (en) * 1979-06-04 1983-01-04 Varian Associates, Inc. Unitary electromagnet for double deflection scanning of charged particle beam
JPS5953659B2 (ja) * 1980-04-11 1984-12-26 株式会社日立製作所 真空室中回転体の往復動機構

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01500310A (ja) * 1986-04-09 1989-02-02 イクリプス・イオン・テクノロジー・インコーポレイテッド イオンビーム走査方法および装置
JPS6396855A (ja) * 1986-10-13 1988-04-27 Hitachi Ltd イオン打込方法及びイオン打込装置
CN106920741A (zh) * 2015-12-10 2017-07-04 住友重机械离子技术有限公司 离子注入方法及离子注入装置

Also Published As

Publication number Publication date
US4476393A (en) 1984-10-09

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