JPS57162421A - Depositing method - Google Patents

Depositing method

Info

Publication number
JPS57162421A
JPS57162421A JP57040661A JP4066182A JPS57162421A JP S57162421 A JPS57162421 A JP S57162421A JP 57040661 A JP57040661 A JP 57040661A JP 4066182 A JP4066182 A JP 4066182A JP S57162421 A JPS57162421 A JP S57162421A
Authority
JP
Japan
Prior art keywords
depositing method
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57040661A
Other languages
English (en)
Inventor
Deii Kiyanera Binsento
Izu Masatsugu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atlantic Richfield Co
Original Assignee
Atlantic Richfield Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atlantic Richfield Co filed Critical Atlantic Richfield Co
Publication of JPS57162421A publication Critical patent/JPS57162421A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP57040661A 1981-03-16 1982-03-15 Depositing method Pending JPS57162421A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/244,388 US4379181A (en) 1981-03-16 1981-03-16 Method for plasma deposition of amorphous materials

Publications (1)

Publication Number Publication Date
JPS57162421A true JPS57162421A (en) 1982-10-06

Family

ID=22922527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57040661A Pending JPS57162421A (en) 1981-03-16 1982-03-15 Depositing method

Country Status (4)

Country Link
US (1) US4379181A (ja)
EP (1) EP0060625B1 (ja)
JP (1) JPS57162421A (ja)
DE (1) DE3272503D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018012428A1 (ja) * 2016-07-11 2018-01-18 中部抵抗器株式会社 ヒートパイプ式の熱交換装置、およびサーバーシステム用の空気調和装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4515107A (en) * 1982-11-12 1985-05-07 Sovonics Solar Systems Apparatus for the manufacture of photovoltaic devices
US4513684A (en) * 1982-12-22 1985-04-30 Energy Conversion Devices, Inc. Upstream cathode assembly
US4593644A (en) * 1983-10-26 1986-06-10 Rca Corporation Continuous in-line deposition system
US4749588A (en) * 1984-09-07 1988-06-07 Nobuhiro Fukuda Process for producing hydrogenated amorphous silicon thin film and a solar cell
JP2660243B2 (ja) * 1985-08-08 1997-10-08 株式会社半導体エネルギー研究所 半導体装置作製方法
JPH11251612A (ja) * 1998-03-03 1999-09-17 Canon Inc 光起電力素子の製造方法
US6451637B1 (en) * 1998-07-10 2002-09-17 L.G. Philips Lcd Co., Ltd. Method of forming a polycrystalline silicon film
US11251019B2 (en) * 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154726A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Manufacture of semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL112797C (ja) * 1957-04-30
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS53112066A (en) * 1977-03-11 1978-09-30 Fujitsu Ltd Plasma treatment apparatus
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
GB2033355B (en) * 1978-09-07 1982-05-06 Standard Telephones Cables Ltd Semiconductor processing
US4226643A (en) * 1979-07-16 1980-10-07 Rca Corporation Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154726A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018012428A1 (ja) * 2016-07-11 2018-01-18 中部抵抗器株式会社 ヒートパイプ式の熱交換装置、およびサーバーシステム用の空気調和装置

Also Published As

Publication number Publication date
US4379181A (en) 1983-04-05
DE3272503D1 (en) 1986-09-18
EP0060625B1 (en) 1986-08-13
EP0060625A3 (en) 1983-01-19
EP0060625A2 (en) 1982-09-22

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