JPS57150193A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS57150193A
JPS57150193A JP3633581A JP3633581A JPS57150193A JP S57150193 A JPS57150193 A JP S57150193A JP 3633581 A JP3633581 A JP 3633581A JP 3633581 A JP3633581 A JP 3633581A JP S57150193 A JPS57150193 A JP S57150193A
Authority
JP
Japan
Prior art keywords
potential
write
memory cell
pulse
volatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3633581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129077B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3633581A priority Critical patent/JPS57150193A/ja
Publication of JPS57150193A publication Critical patent/JPS57150193A/ja
Publication of JPS6129077B2 publication Critical patent/JPS6129077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)
JP3633581A 1981-03-13 1981-03-13 Non-volatile semiconductor memory device Granted JPS57150193A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3633581A JPS57150193A (en) 1981-03-13 1981-03-13 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3633581A JPS57150193A (en) 1981-03-13 1981-03-13 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS57150193A true JPS57150193A (en) 1982-09-16
JPS6129077B2 JPS6129077B2 (enrdf_load_stackoverflow) 1986-07-04

Family

ID=12466952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3633581A Granted JPS57150193A (en) 1981-03-13 1981-03-13 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57150193A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60179999A (ja) * 1984-02-28 1985-09-13 Fujitsu Ltd 不揮発性半導体記憶装置
EP0646933A3 (en) * 1993-10-04 1995-11-02 Texas Instruments Inc Method for programming floating door memory cells.
JP2006525622A (ja) * 2003-04-30 2006-11-09 フリースケール セミコンダクター インコーポレイテッド Ｈｃｉプログラミングのためにソース電極上にバイアスを有する不揮発性メモリ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60179999A (ja) * 1984-02-28 1985-09-13 Fujitsu Ltd 不揮発性半導体記憶装置
EP0646933A3 (en) * 1993-10-04 1995-11-02 Texas Instruments Inc Method for programming floating door memory cells.
JP2006525622A (ja) * 2003-04-30 2006-11-09 フリースケール セミコンダクター インコーポレイテッド Ｈｃｉプログラミングのためにソース電極上にバイアスを有する不揮発性メモリ
EP1623431A4 (en) * 2003-04-30 2007-10-17 Freescale Semiconductor Inc NON-VOLATILE MEMORY WITH A VOLTAGE ON THE SOURCE ELECTRODE FOR HCI PROGRAMMING

Also Published As

Publication number Publication date
JPS6129077B2 (enrdf_load_stackoverflow) 1986-07-04

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