JPS57145257A - Method of x-ray generation - Google Patents

Method of x-ray generation

Info

Publication number
JPS57145257A
JPS57145257A JP56029331A JP2933181A JPS57145257A JP S57145257 A JPS57145257 A JP S57145257A JP 56029331 A JP56029331 A JP 56029331A JP 2933181 A JP2933181 A JP 2933181A JP S57145257 A JPS57145257 A JP S57145257A
Authority
JP
Japan
Prior art keywords
ray generation
generation material
generated
liquid surface
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56029331A
Other languages
Japanese (ja)
Inventor
Masahiro Okabe
Yoshitaka Kitamura
Yasuo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56029331A priority Critical patent/JPS57145257A/en
Publication of JPS57145257A publication Critical patent/JPS57145257A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/112—Non-rotating anodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/08—Targets (anodes) and X-ray converters
    • H01J2235/081—Target material
    • H01J2235/082—Fluids, e.g. liquids, gases

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To efficiently generate x rays by emitting electron beam from an electron gun on the liquid surface of an x-ray generation material using an electro- optic system. CONSTITUTION:An x-ray generation material in fused status is sent to a container 15 from a pipe 17. The x-ray generation material 16 which is sent to the container 15 is heated by a heater 21 and is kept in liquid status. The liquid surface is adjusted up to a preset height by a valve 18. Then a pulse-shaped electron beam 29 is generated by an electron gun 22. This electron beam 29 is formed into a preset beam shape by an electron gun and a deflector 31 and is emitted on the liquid surface of the x-ray generation material 16. As a result, plasma is generated on the liquid surface of the x-ray generation material 16. When the plasma is recombined, x rays are generated by the damping radiation of the electron beam. These generated x rays are externally taken out through the x-ray removal port 20 of the container 15 and the window 33 of a vacuum container 32.
JP56029331A 1981-03-03 1981-03-03 Method of x-ray generation Pending JPS57145257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56029331A JPS57145257A (en) 1981-03-03 1981-03-03 Method of x-ray generation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56029331A JPS57145257A (en) 1981-03-03 1981-03-03 Method of x-ray generation

Publications (1)

Publication Number Publication Date
JPS57145257A true JPS57145257A (en) 1982-09-08

Family

ID=12273238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56029331A Pending JPS57145257A (en) 1981-03-03 1981-03-03 Method of x-ray generation

Country Status (1)

Country Link
JP (1) JPS57145257A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186491A2 (en) * 1984-12-26 1986-07-02 Kabushiki Kaisha Toshiba Apparatus for producing soft X-rays using a high energy beam
US5204506A (en) * 1987-12-07 1993-04-20 The Regents Of The University Of California Plasma pinch surface treating apparatus and method of using same
WO2014187586A1 (en) * 2013-05-22 2014-11-27 Siemens Aktiengesellschaft X-ray source and method for producing x-rays

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186491A2 (en) * 1984-12-26 1986-07-02 Kabushiki Kaisha Toshiba Apparatus for producing soft X-rays using a high energy beam
US5204506A (en) * 1987-12-07 1993-04-20 The Regents Of The University Of California Plasma pinch surface treating apparatus and method of using same
WO2014187586A1 (en) * 2013-05-22 2014-11-27 Siemens Aktiengesellschaft X-ray source and method for producing x-rays
CN105379427A (en) * 2013-05-22 2016-03-02 西门子公司 X-ray source and method for producing x-rays

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