JPS57141971A - Method of producing amorphous silicon semiconductor device - Google Patents

Method of producing amorphous silicon semiconductor device

Info

Publication number
JPS57141971A
JPS57141971A JP56166284A JP16628481A JPS57141971A JP S57141971 A JPS57141971 A JP S57141971A JP 56166284 A JP56166284 A JP 56166284A JP 16628481 A JP16628481 A JP 16628481A JP S57141971 A JPS57141971 A JP S57141971A
Authority
JP
Japan
Prior art keywords
semiconductor device
amorphous silicon
silicon semiconductor
producing amorphous
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56166284A
Other languages
English (en)
Japanese (ja)
Inventor
Emiru Kaaruson Deibitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR7601783A external-priority patent/KR810001312B1/ko
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS57141971A publication Critical patent/JPS57141971A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP56166284A 1975-07-28 1981-10-16 Method of producing amorphous silicon semiconductor device Pending JPS57141971A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US59958875A 1975-07-28 1975-07-28
KR7601783A KR810001312B1 (ko) 1975-07-28 1976-07-22 비결정 실리콘 활성영역을 갖는 반도체장치
KR1019800002296A KR810001314B1 (ko) 1975-07-28 1980-06-11 비결정 실리콘 활성영역을 갖는 반도체 장치

Publications (1)

Publication Number Publication Date
JPS57141971A true JPS57141971A (en) 1982-09-02

Family

ID=27348144

Family Applications (5)

Application Number Title Priority Date Filing Date
JP56166284A Pending JPS57141971A (en) 1975-07-28 1981-10-16 Method of producing amorphous silicon semiconductor device
JP56166283A Granted JPS57141970A (en) 1975-07-28 1981-10-16 Semiconductor device
JP56166285A Pending JPS57141972A (en) 1975-07-28 1981-10-16 Amorphous silicon solar battery
JP57117601A Pending JPS5828878A (ja) 1975-07-28 1982-07-05 半導体装置
JP57117602A Pending JPS5825283A (ja) 1975-07-28 1982-07-05 光検知装置

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP56166283A Granted JPS57141970A (en) 1975-07-28 1981-10-16 Semiconductor device
JP56166285A Pending JPS57141972A (en) 1975-07-28 1981-10-16 Amorphous silicon solar battery
JP57117601A Pending JPS5828878A (ja) 1975-07-28 1982-07-05 半導体装置
JP57117602A Pending JPS5825283A (ja) 1975-07-28 1982-07-05 光検知装置

Country Status (3)

Country Link
JP (5) JPS57141971A (enrdf_load_stackoverflow)
KR (1) KR810001314B1 (enrdf_load_stackoverflow)
SU (1) SU1405712A3 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245184A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd 光電変換素子
DE4138131A1 (de) * 1991-10-19 1993-04-22 Provera Ges Fuer Projektierung Kontaktlose chip-karte mit integriertem mikroprozessor und vorrichtung zum lesen und eingeben von informationen
RU2002115830A (ru) * 2002-06-17 2004-01-27 Саито ТАКЕШИ (JP) Элемент солнечной батереи
RU2217845C1 (ru) * 2002-09-04 2003-11-27 Займидорога Олег Антонович Гетерогенный фотоэлемент
WO2010020469A2 (en) * 2008-08-19 2010-02-25 Oerlikon Solar Ip Ag, Truebbach Photovoltaic cell and method of manufacturing a photovoltaic cell
RU2477905C1 (ru) * 2011-09-15 2013-03-20 Виктор Анатольевич Капитанов Тонкопленочный кремниевый фотоэлектрический преобразователь
RU2657349C2 (ru) * 2016-10-04 2018-06-13 Викторс Николаевич Гавриловс Способ повышения эффективности преобразования энергии поглощенного потока электромагнитных волн солнечного света в электрическую энергию с помощью образованного "темнового тока" и объемной ультразвуковой дифракционной решетки в монокристалле кремния в результате возбуждения в нем периодических высокочастотных ультразвуковых сдвиговых волн

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414848B2 (enrdf_load_stackoverflow) * 1975-02-05 1979-06-11

Also Published As

Publication number Publication date
JPS57141970A (en) 1982-09-02
SU1405712A3 (ru) 1988-06-23
KR810001314B1 (ko) 1981-10-13
JPS57141972A (en) 1982-09-02
JPS5825283A (ja) 1983-02-15
JPS5828878A (ja) 1983-02-19
JPS6134268B2 (enrdf_load_stackoverflow) 1986-08-06

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