JPS57132653A - Ion source and method of modifying property of substance - Google Patents

Ion source and method of modifying property of substance

Info

Publication number
JPS57132653A
JPS57132653A JP56177015A JP17701581A JPS57132653A JP S57132653 A JPS57132653 A JP S57132653A JP 56177015 A JP56177015 A JP 56177015A JP 17701581 A JP17701581 A JP 17701581A JP S57132653 A JPS57132653 A JP S57132653A
Authority
JP
Japan
Prior art keywords
substance
ion source
modifying property
modifying
property
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56177015A
Other languages
English (en)
Japanese (ja)
Other versions
JPH031374B2 (enExample
Inventor
Wan Bikutaa
Ee Uisotsuki Jiyosefu
Eru Tangonan Guregorii
Eru Serigaa Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of JPS57132653A publication Critical patent/JPS57132653A/ja
Publication of JPH031374B2 publication Critical patent/JPH031374B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0805—Liquid metal sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
JP56177015A 1980-11-03 1981-11-04 Ion source and method of modifying property of substance Granted JPS57132653A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/203,294 US4367429A (en) 1980-11-03 1980-11-03 Alloys for liquid metal ion sources

Publications (2)

Publication Number Publication Date
JPS57132653A true JPS57132653A (en) 1982-08-17
JPH031374B2 JPH031374B2 (enExample) 1991-01-10

Family

ID=22753350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56177015A Granted JPS57132653A (en) 1980-11-03 1981-11-04 Ion source and method of modifying property of substance

Country Status (3)

Country Link
US (1) US4367429A (enExample)
JP (1) JPS57132653A (enExample)
GB (1) GB2087139B (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200449A (ja) * 1984-03-26 1985-10-09 Hitachi Ltd イオンビ−ムによるプロセス方法と装置
JPS63170940A (ja) * 1987-12-02 1988-07-14 Hitachi Ltd Ｉｃ素子の修正方法
JPS63296241A (ja) * 1987-12-02 1988-12-02 Hitachi Ltd Ｉｃ素子の加工装置
JPS6419650A (en) * 1987-07-14 1989-01-23 Denki Kagaku Kogyo Kk Field emission type ion source
JPH06244179A (ja) * 1993-11-15 1994-09-02 Hitachi Ltd Ｉｃ素子の修正方法
JPH06244177A (ja) * 1993-11-15 1994-09-02 Hitachi Ltd Ｉｃ素子の修正方法
JPH06244178A (ja) * 1993-11-15 1994-09-02 Hitachi Ltd Ｉｃ素子の加工装置
JPH08153721A (ja) * 1995-04-26 1996-06-11 Hitachi Ltd Ｉｃ素子の修正方法及びその装置
JPH08213350A (ja) * 1995-10-27 1996-08-20 Hitachi Ltd イオンビーム除去加工方法及びその装置並びにイオンビーム局所成膜方法及びその装置

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201527A (en) * 1981-06-01 1982-12-10 Toshiba Corp Ion implantation method
DE3134337A1 (de) * 1981-08-31 1983-03-24 Technics GmbH Europa, 8011 Kirchheim Ionenstrahlkanone
JPS5838906B2 (ja) * 1981-09-03 1983-08-26 日本電子株式会社 金属イオン源
JPS5878557U (ja) * 1981-11-24 1983-05-27 株式会社日立製作所 電界放出型イオン源
US4577135A (en) * 1982-02-22 1986-03-18 United Kingdom Atomic Energy Authority Liquid metal ion sources
JPS5935347A (ja) * 1982-08-20 1984-02-27 Masahiko Tsuchiya イオン生成装置
US4521800A (en) * 1982-10-15 1985-06-04 Standard Oil Company (Indiana) Multilayer photoelectrodes utilizing exotic materials
JPS59191225A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 液体金属イオン種合金
US4424104A (en) 1983-05-12 1984-01-03 International Business Machines Corporation Single axis combined ion and vapor source
US4556798A (en) * 1983-07-12 1985-12-03 Hughes Aircraft Company Focused ion beam column
JPH0622094B2 (ja) * 1983-11-28 1994-03-23 株式会社日立製作所 液体金属イオン源
US4686414A (en) * 1984-11-20 1987-08-11 Hughes Aircraft Company Enhanced wetting of liquid metal alloy ion sources
US4629931A (en) * 1984-11-20 1986-12-16 Hughes Aircraft Company Liquid metal ion source
JPS61142645A (ja) * 1984-12-17 1986-06-30 Hitachi Ltd 正，負兼用イオン源
JPH0685309B2 (ja) * 1985-12-13 1994-10-26 株式会社日立製作所 液体金属イオン源
US4775818A (en) * 1986-04-14 1988-10-04 Hughes Aircraft Company Liquid metal ion source and alloy
US4670685A (en) * 1986-04-14 1987-06-02 Hughes Aircraft Company Liquid metal ion source and alloy for ion emission of multiple ionic species
US4731562A (en) * 1986-05-27 1988-03-15 The United States Of America As Represented By The Department Of Energy Electrohydrodynamically driven large-area liquid ion sources
NL8602176A (nl) * 1986-08-27 1988-03-16 Philips Nv Ionen bundel apparaat voor nabewerking van patronen.
US5165954A (en) * 1986-09-02 1992-11-24 Microbeam, Inc. Method for repairing semiconductor masks & reticles
JPS62216130A (ja) * 1987-03-13 1987-09-22 Hitachi Ltd 液体金属イオン源
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
US4892752A (en) * 1987-08-12 1990-01-09 Oki Electric Industry Co., Ltd. Method of ion implantation
JP2713923B2 (ja) * 1987-10-07 1998-02-16 株式会社日立製作所 集束イオンビームを用いたデバイス加工方法
US5034612A (en) * 1989-05-26 1991-07-23 Micrion Corporation Ion source method and apparatus
US4994711A (en) * 1989-12-22 1991-02-19 Hughes Aircraft Company High brightness solid electrolyte ion source
JPH03241646A (ja) * 1990-02-19 1991-10-28 Seiko Instr Inc 液体金属イオン源のコントロール方法
KR100271244B1 (ko) * 1993-09-07 2000-11-01 히가시 데쓰로 전자빔 여기식 플라즈마장치
US5413755A (en) * 1993-10-26 1995-05-09 At&T Corp. Article comprising an intermetallic superconducting material
US6096263A (en) * 1993-10-26 2000-08-01 Lucent Technologies Inc. Article comprising an intermetallic superconductor material
EP1171901B1 (en) * 2000-02-09 2008-10-08 Fei Company Multi-column fib for nanofabrication applications
US7129513B2 (en) * 2004-06-02 2006-10-31 Xintek, Inc. Field emission ion source based on nanostructure-containing material
EP1956634A1 (en) * 2007-02-06 2008-08-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Method and apparatus for in-situ sample preparation
DE102007027097B4 (de) * 2007-06-12 2010-12-30 Forschungszentrum Dresden - Rossendorf E.V. Flüssigmetall-Ionenquelle zur Erzeugung von Lithium-Ionenstrahlen
US7827779B1 (en) * 2007-09-10 2010-11-09 Alameda Applied Sciences Corp. Liquid metal ion thruster array
JP5707325B2 (ja) * 2008-08-29 2015-04-30 カール ツァイス マイクロスコーピー エルエルシー イオンビーム安定化方法
US8453426B2 (en) * 2009-04-06 2013-06-04 Raytheon Company Current controlled field emission thruster
US8134290B2 (en) 2009-04-30 2012-03-13 Scientific Instrument Services, Inc. Emission filaments made from a rhenium alloy and method of manufacturing thereof
US8455822B2 (en) 2010-08-31 2013-06-04 Fei Company Navigation and sample processing using an ion source containing both low-mass and high-mass species

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730243A (en) * 1980-07-31 1982-02-18 Rikagaku Kenkyusho Ion beam forming method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328667A (en) * 1979-03-30 1982-05-11 The European Space Research Organisation Field-emission ion source and ion thruster apparatus comprising such sources
US4318030A (en) * 1980-05-12 1982-03-02 Hughes Aircraft Company Liquid metal ion source
US4318029A (en) * 1980-05-12 1982-03-02 Hughes Aircraft Company Liquid metal ion source

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730243A (en) * 1980-07-31 1982-02-18 Rikagaku Kenkyusho Ion beam forming method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200449A (ja) * 1984-03-26 1985-10-09 Hitachi Ltd イオンビ−ムによるプロセス方法と装置
JPS6419650A (en) * 1987-07-14 1989-01-23 Denki Kagaku Kogyo Kk Field emission type ion source
JPS63170940A (ja) * 1987-12-02 1988-07-14 Hitachi Ltd Ｉｃ素子の修正方法
JPS63296241A (ja) * 1987-12-02 1988-12-02 Hitachi Ltd Ｉｃ素子の加工装置
JPH06244179A (ja) * 1993-11-15 1994-09-02 Hitachi Ltd Ｉｃ素子の修正方法
JPH06244177A (ja) * 1993-11-15 1994-09-02 Hitachi Ltd Ｉｃ素子の修正方法
JPH06244178A (ja) * 1993-11-15 1994-09-02 Hitachi Ltd Ｉｃ素子の加工装置
JPH08153721A (ja) * 1995-04-26 1996-06-11 Hitachi Ltd Ｉｃ素子の修正方法及びその装置
JPH08213350A (ja) * 1995-10-27 1996-08-20 Hitachi Ltd イオンビーム除去加工方法及びその装置並びにイオンビーム局所成膜方法及びその装置

Also Published As

Publication number Publication date
GB2087139B (en) 1984-08-01
GB2087139A (en) 1982-05-19
US4367429A (en) 1983-01-04
JPH031374B2 (enExample) 1991-01-10

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