JPS57130467A - Flush type charge transfer device - Google Patents
Flush type charge transfer deviceInfo
- Publication number
- JPS57130467A JPS57130467A JP1615981A JP1615981A JPS57130467A JP S57130467 A JPS57130467 A JP S57130467A JP 1615981 A JP1615981 A JP 1615981A JP 1615981 A JP1615981 A JP 1615981A JP S57130467 A JPS57130467 A JP S57130467A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- regions
- signal charge
- depth
- transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 230000007704 transition Effects 0.000 abstract 3
- -1 Phosphorus ions Chemical class 0.000 abstract 1
- 230000003190 augmentative effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To increase the quantity of transfer signal charge, and to make the titled device proper to a small-sized image sensor by forming the position of the end section of a depletion layer when viewed in the depth direction from the interface of a substrate so that a transition region is deepened more than a storage region in the flush type CCD. CONSTITUTION:Phosphorus ions are implanted in the substrate such as a P type substrate 1, the substrate is thermally treated for a long time, and the N<-> transition regions 14 are shaped, and As is injected and the N<+> storage regions 15 are formed. Gate electrodes 3', 4' consisting of poly Si and wiring 3, 4 for applying clock voltage are shaped onto the substrate structure through a gate film 2, and the CCD is molded. The depth 16 of the junctions of the regions 14 is set to approximately 0.8mum and the depth 17 of the regions 15 to approximately 0.3mum. Accordingly, the potential profiles in the depth direction of the transition regions 14 can be formed in shapes that their gradients are gentle (the left-over of loading is difficult to be formed when the quantity of signal charge is increased). Consequently, the maximum quantity of signal charge can be augmented, and the device having a wide dynamic range and excellent S/N can be manufactured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1615981A JPS57130467A (en) | 1981-02-04 | 1981-02-04 | Flush type charge transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1615981A JPS57130467A (en) | 1981-02-04 | 1981-02-04 | Flush type charge transfer device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57130467A true JPS57130467A (en) | 1982-08-12 |
| JPS6313349B2 JPS6313349B2 (en) | 1988-03-25 |
Family
ID=11908721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1615981A Granted JPS57130467A (en) | 1981-02-04 | 1981-02-04 | Flush type charge transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57130467A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5073578A (en) * | 1973-10-30 | 1975-06-17 | ||
| JPS5181068U (en) * | 1974-12-20 | 1976-06-28 |
-
1981
- 1981-02-04 JP JP1615981A patent/JPS57130467A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5073578A (en) * | 1973-10-30 | 1975-06-17 | ||
| JPS5181068U (en) * | 1974-12-20 | 1976-06-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6313349B2 (en) | 1988-03-25 |
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