JPS57130358A - Full automatic ion implantation device - Google Patents

Full automatic ion implantation device

Info

Publication number
JPS57130358A
JPS57130358A JP56015018A JP1501881A JPS57130358A JP S57130358 A JPS57130358 A JP S57130358A JP 56015018 A JP56015018 A JP 56015018A JP 1501881 A JP1501881 A JP 1501881A JP S57130358 A JPS57130358 A JP S57130358A
Authority
JP
Japan
Prior art keywords
implantation
ion beam
ion implantation
control computer
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56015018A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0234151B2 (enrdf_load_stackoverflow
Inventor
Michiyuki Harada
Masayasu Miyake
Yoichi Egami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56015018A priority Critical patent/JPS57130358A/ja
Publication of JPS57130358A publication Critical patent/JPS57130358A/ja
Publication of JPH0234151B2 publication Critical patent/JPH0234151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electron Sources, Ion Sources (AREA)
JP56015018A 1981-02-05 1981-02-05 Full automatic ion implantation device Granted JPS57130358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56015018A JPS57130358A (en) 1981-02-05 1981-02-05 Full automatic ion implantation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56015018A JPS57130358A (en) 1981-02-05 1981-02-05 Full automatic ion implantation device

Publications (2)

Publication Number Publication Date
JPS57130358A true JPS57130358A (en) 1982-08-12
JPH0234151B2 JPH0234151B2 (enrdf_load_stackoverflow) 1990-08-01

Family

ID=11877118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56015018A Granted JPS57130358A (en) 1981-02-05 1981-02-05 Full automatic ion implantation device

Country Status (1)

Country Link
JP (1) JPS57130358A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107246A (ja) * 1983-08-15 1985-06-12 アプライド　マテリアルズ　インコ−ポレ−テツド イオン源装置
JPS60232656A (ja) * 1984-04-28 1985-11-19 Nissin Electric Co Ltd イオン注入装置
JPS62108440A (ja) * 1985-11-06 1987-05-19 Hitachi Ltd 微細加工装置
JPS62117247A (ja) * 1985-11-18 1987-05-28 Tokyo Electron Ltd イオン注入方法
JPS62142151U (enrdf_load_stackoverflow) * 1986-03-03 1987-09-08
JPS63146337A (ja) * 1986-12-08 1988-06-18 Fuji Electric Co Ltd イオンビ−ム装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507797U (enrdf_load_stackoverflow) * 1973-05-21 1975-01-27
JPS5021673A (enrdf_load_stackoverflow) * 1973-05-23 1975-03-07
JPS5569370U (enrdf_load_stackoverflow) * 1978-11-08 1980-05-13
JPS5569950A (en) * 1978-11-20 1980-05-27 Mitsubishi Electric Corp Control method of analytical magnet and its device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507797U (enrdf_load_stackoverflow) * 1973-05-21 1975-01-27
JPS5021673A (enrdf_load_stackoverflow) * 1973-05-23 1975-03-07
JPS5569370U (enrdf_load_stackoverflow) * 1978-11-08 1980-05-13
JPS5569950A (en) * 1978-11-20 1980-05-27 Mitsubishi Electric Corp Control method of analytical magnet and its device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107246A (ja) * 1983-08-15 1985-06-12 アプライド　マテリアルズ　インコ−ポレ−テツド イオン源装置
JPS60232656A (ja) * 1984-04-28 1985-11-19 Nissin Electric Co Ltd イオン注入装置
JPS62108440A (ja) * 1985-11-06 1987-05-19 Hitachi Ltd 微細加工装置
JPS62117247A (ja) * 1985-11-18 1987-05-28 Tokyo Electron Ltd イオン注入方法
JPS62142151U (enrdf_load_stackoverflow) * 1986-03-03 1987-09-08
JPS63146337A (ja) * 1986-12-08 1988-06-18 Fuji Electric Co Ltd イオンビ−ム装置

Also Published As

Publication number Publication date
JPH0234151B2 (enrdf_load_stackoverflow) 1990-08-01

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