JPS5712550A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5712550A
JPS5712550A JP8733580A JP8733580A JPS5712550A JP S5712550 A JPS5712550 A JP S5712550A JP 8733580 A JP8733580 A JP 8733580A JP 8733580 A JP8733580 A JP 8733580A JP S5712550 A JPS5712550 A JP S5712550A
Authority
JP
Japan
Prior art keywords
region
small number
capacity
memory
increased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8733580A
Other languages
Japanese (ja)
Inventor
Shiyouji Ariizumi
Makoto Segawa
Toshiaki Maiwa
Seiji Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8733580A priority Critical patent/JPS5712550A/en
Priority to US06/235,859 priority patent/US4399520A/en
Priority to EP81300720A priority patent/EP0034931B1/en
Priority to DE8181300720T priority patent/DE3167256D1/en
Publication of JPS5712550A publication Critical patent/JPS5712550A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To increase the capacity of a memory, and to improve the reliability of the memory by making data storage capacity value in a region where a small number of carriers reach from a small number carrier generating source larger than the value in a region where they do not reach. CONSTITUTION:A region B where the information of cells is not broken even when a small number of carriers reach is obtained from an operating temperature, line voltage, the concentration of a substrate, the dimensions of the small number carrier generating source 21, the number of kinds and a position, and a region A where the information of cells is broken is presumed theoretically and experimentally from the result. The cell size of a region C containing cells in the region A is enlarged, and data storage capacity is increased. The area of a capacity electrode, for example, is augmented, and capacity is increased. All cell size of the region C are further enlarged, and the unbalance of the arrangement of each cell due to the extension of the cell size only in the region A is prevented. According to this constitution, the breaking of data due to the reaching of a small number of carriers can be obviated, chip size is not augmented largely, the capacity of the memory is increased and the reliability of the device can be improved.
JP8733580A 1980-02-22 1980-06-27 Semiconductor integrated circuit Pending JPS5712550A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8733580A JPS5712550A (en) 1980-06-27 1980-06-27 Semiconductor integrated circuit
US06/235,859 US4399520A (en) 1980-02-22 1981-02-19 Semiconductor integrated circuit device
EP81300720A EP0034931B1 (en) 1980-02-22 1981-02-20 Semiconductor integrated circuit
DE8181300720T DE3167256D1 (en) 1980-02-22 1981-02-20 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8733580A JPS5712550A (en) 1980-06-27 1980-06-27 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5712550A true JPS5712550A (en) 1982-01-22

Family

ID=13911995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8733580A Pending JPS5712550A (en) 1980-02-22 1980-06-27 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5712550A (en)

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