JPS57123900A - Cutting method of gallium phosphide crystal substrate - Google Patents

Cutting method of gallium phosphide crystal substrate

Info

Publication number
JPS57123900A
JPS57123900A JP910381A JP910381A JPS57123900A JP S57123900 A JPS57123900 A JP S57123900A JP 910381 A JP910381 A JP 910381A JP 910381 A JP910381 A JP 910381A JP S57123900 A JPS57123900 A JP S57123900A
Authority
JP
Japan
Prior art keywords
faces
substrate
face
crystal
intersections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP910381A
Other languages
Japanese (ja)
Inventor
Masakatsu Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP910381A priority Critical patent/JPS57123900A/en
Publication of JPS57123900A publication Critical patent/JPS57123900A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prepare pellets of a GaP crystal substrate in high yield, by cutting and dividing a crystal with faces at a specific angle to intersections[110]of the substrate face{100}and faces{110}of the GaP crystal.
CONSTITUTION: In a substrate, containing GaP as a principal component, and having a principal face in parallel with the crystal face{100}, pellets obtained by cutting and dividing the substrate along intersections[110]of the face{100} and faces{110}have four{110}faces, and a stress component (σ) on the face reaches a maximum when an external stress (F) is in parallel with the faces {110}(θ=0) to become easily broken by the external stress (F). In order to avoid the disadvantage, the substrate is cut by faces at an angle of 45±5° to the directions (a) and (b) of the intersections[110]and perpendicular to the substrate face{100}to give pellets 1. Thus, the component (σ) is minimized to improve the breaking strength and further the pellet yield.
COPYRIGHT: (C)1982,JPO&Japio
JP910381A 1981-01-26 1981-01-26 Cutting method of gallium phosphide crystal substrate Pending JPS57123900A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP910381A JPS57123900A (en) 1981-01-26 1981-01-26 Cutting method of gallium phosphide crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP910381A JPS57123900A (en) 1981-01-26 1981-01-26 Cutting method of gallium phosphide crystal substrate

Publications (1)

Publication Number Publication Date
JPS57123900A true JPS57123900A (en) 1982-08-02

Family

ID=11711286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP910381A Pending JPS57123900A (en) 1981-01-26 1981-01-26 Cutting method of gallium phosphide crystal substrate

Country Status (1)

Country Link
JP (1) JPS57123900A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0365599A (en) * 1989-08-02 1991-03-20 Toshiba Corp Iii-v semiconductor pellet

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0365599A (en) * 1989-08-02 1991-03-20 Toshiba Corp Iii-v semiconductor pellet
JPH0529640B2 (en) * 1989-08-02 1993-05-06 Tokyo Shibaura Electric Co

Similar Documents

Publication Publication Date Title
JPS57123900A (en) Cutting method of gallium phosphide crystal substrate
JPS52127085A (en) Semiconductor laser
JPS5366161A (en) Cutting of semiconductor crystal
JPS52103786A (en) Method of cutting crystal body
JPS53123657A (en) Production of semiconductor unit
JPS5386158A (en) Production of semiconductor device
JPS5362462A (en) Production of semiconductor divice
JPS57128087A (en) Magneto-electric transducer element
JPS5572055A (en) Preparation of semiconductor device
JPS5512710A (en) Semiconductor device
JPS5350587A (en) Throw-away type formed cutter
JPS5359366A (en) Semiconductor unit
JPS535973A (en) Preparation of semiconductor device
JPS535957A (en) Manufacture of semiconductor device
JPS5368092A (en) Cut-off method of oxide piezoelectric single crystal
JPS56157943A (en) Burr removing process and its device
JPS56126520A (en) Disc cutter for cylindrical piece
JPS5766829A (en) Rough surface processing method
JPS56155548A (en) Manufacture of semiconductor element
JPS5421860A (en) Production of liquid crystal elements
JPS5413789A (en) Inspecting method of orientation flat bearing of lithium tantalate x-plate wafers
JPS5389088A (en) Diamond blade
JPS5336181A (en) Production of semiconductor device
JPS5335392A (en) Mode controlled semiconductor laser
JPS578013A (en) Method of cutting of thermally-extended rough bar