JPS5712356A - Method for measuring content of oxygen in silicon - Google Patents
Method for measuring content of oxygen in siliconInfo
- Publication number
- JPS5712356A JPS5712356A JP8617280A JP8617280A JPS5712356A JP S5712356 A JPS5712356 A JP S5712356A JP 8617280 A JP8617280 A JP 8617280A JP 8617280 A JP8617280 A JP 8617280A JP S5712356 A JPS5712356 A JP S5712356A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- specific resistance
- content
- silicon
- variation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating And Analyzing Materials By Characteristic Methods (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8617280A JPS5712356A (en) | 1980-06-25 | 1980-06-25 | Method for measuring content of oxygen in silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8617280A JPS5712356A (en) | 1980-06-25 | 1980-06-25 | Method for measuring content of oxygen in silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5712356A true JPS5712356A (en) | 1982-01-22 |
| JPS647338B2 JPS647338B2 (show.php) | 1989-02-08 |
Family
ID=13879329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8617280A Granted JPS5712356A (en) | 1980-06-25 | 1980-06-25 | Method for measuring content of oxygen in silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5712356A (show.php) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103189740A (zh) * | 2010-09-02 | 2013-07-03 | 原子能和代替能源委员会 | 测绘氧浓度的方法 |
| CN103620394A (zh) * | 2011-04-15 | 2014-03-05 | 原子能和代替能源委员会 | 确定填隙氧浓度的方法 |
| US20150055677A1 (en) * | 2012-04-06 | 2015-02-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Determination of the interstitial oxygen concentration in a semiconductor sample |
| CN115732352A (zh) * | 2021-08-26 | 2023-03-03 | 长鑫存储技术有限公司 | 半导体设备内气体浓度的监测方法 |
-
1980
- 1980-06-25 JP JP8617280A patent/JPS5712356A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103189740A (zh) * | 2010-09-02 | 2013-07-03 | 原子能和代替能源委员会 | 测绘氧浓度的方法 |
| CN103620394A (zh) * | 2011-04-15 | 2014-03-05 | 原子能和代替能源委员会 | 确定填隙氧浓度的方法 |
| US9274072B2 (en) | 2011-04-15 | 2016-03-01 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for determining interstitial oxygen concentration |
| US20150055677A1 (en) * | 2012-04-06 | 2015-02-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Determination of the interstitial oxygen concentration in a semiconductor sample |
| US9297774B2 (en) * | 2012-04-06 | 2016-03-29 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Determination of the interstitial oxygen concentration in a semiconductor sample |
| CN115732352A (zh) * | 2021-08-26 | 2023-03-03 | 长鑫存储技术有限公司 | 半导体设备内气体浓度的监测方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS647338B2 (show.php) | 1989-02-08 |
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