JPS57121222A - Method of producing semiconductor device - Google Patents

Method of producing semiconductor device

Info

Publication number
JPS57121222A
JPS57121222A JP56195137A JP19513781A JPS57121222A JP S57121222 A JPS57121222 A JP S57121222A JP 56195137 A JP56195137 A JP 56195137A JP 19513781 A JP19513781 A JP 19513781A JP S57121222 A JPS57121222 A JP S57121222A
Authority
JP
Japan
Prior art keywords
semiconductor device
producing semiconductor
producing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56195137A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262457B2 (enExample
Inventor
Punteru Hendoriku
Yan Wahenaaru Korunerisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS57121222A publication Critical patent/JPS57121222A/ja
Publication of JPS6262457B2 publication Critical patent/JPS6262457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
JP56195137A 1980-12-09 1981-12-05 Method of producing semiconductor device Granted JPS57121222A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8006668A NL8006668A (nl) 1980-12-09 1980-12-09 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS57121222A true JPS57121222A (en) 1982-07-28
JPS6262457B2 JPS6262457B2 (enExample) 1987-12-26

Family

ID=19836296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56195137A Granted JPS57121222A (en) 1980-12-09 1981-12-05 Method of producing semiconductor device

Country Status (6)

Country Link
US (1) US4381957A (enExample)
EP (1) EP0054317B1 (enExample)
JP (1) JPS57121222A (enExample)
DE (1) DE3169109D1 (enExample)
IE (1) IE52979B1 (enExample)
NL (1) NL8006668A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6390822A (ja) * 1986-09-30 1988-04-21 シーメンス、アクチエンゲゼルシヤフト ｎ型半導体物体にｐ型ドープ区域を作る方法
JPS6390823A (ja) * 1986-09-30 1988-04-21 シーメンス、アクチエンゲゼルシヤフト 高耐電圧ｐｎ接合の形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
DE3520699A1 (de) * 1985-06-10 1986-01-23 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Verfahren zum selektiven diffundieren von aluminium in ein siliziumsubstrat
US8481414B2 (en) * 2011-04-08 2013-07-09 Micron Technology, Inc. Incorporating impurities using a discontinuous mask
CN113053736B (zh) * 2021-03-11 2024-05-03 捷捷半导体有限公司 一种半导体器件制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310265A (en) * 1976-07-15 1978-01-30 Mitsubishi Electric Corp Impurity diffusion method
JPS54144889A (en) * 1978-05-04 1979-11-12 Hitachi Ltd Manufacture for semiconductor device
JPS55140241A (en) * 1979-04-19 1980-11-01 Matsushita Electronics Corp Method of fabricating semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1227154B (de) * 1963-07-23 1966-10-20 Siemens Ag Verfahren zur Herstellung eines pn-UEbergangs in einer einkristallinen Halbleiteranordnung
FR1495766A (enExample) * 1965-12-10 1967-12-20
DE1811277C3 (de) * 1968-11-27 1978-06-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht
DE2506436C3 (de) * 1975-02-15 1980-05-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Diffusionsverfahren zum Herstellen aluminiumdotierter Isolationszonen für Halbleiterbauelemente
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
US4021269A (en) * 1975-11-26 1977-05-03 General Electric Company Post diffusion after temperature gradient zone melting
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
US4066485A (en) * 1977-01-21 1978-01-03 Rca Corporation Method of fabricating a semiconductor device
JPS53118367A (en) * 1977-03-25 1978-10-16 Hitachi Ltd Manufacture of semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310265A (en) * 1976-07-15 1978-01-30 Mitsubishi Electric Corp Impurity diffusion method
JPS54144889A (en) * 1978-05-04 1979-11-12 Hitachi Ltd Manufacture for semiconductor device
JPS55140241A (en) * 1979-04-19 1980-11-01 Matsushita Electronics Corp Method of fabricating semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6390822A (ja) * 1986-09-30 1988-04-21 シーメンス、アクチエンゲゼルシヤフト ｎ型半導体物体にｐ型ドープ区域を作る方法
JPS6390823A (ja) * 1986-09-30 1988-04-21 シーメンス、アクチエンゲゼルシヤフト 高耐電圧ｐｎ接合の形成方法

Also Published As

Publication number Publication date
EP0054317A1 (en) 1982-06-23
IE812870L (en) 1983-06-09
EP0054317B1 (en) 1985-02-20
DE3169109D1 (en) 1985-03-28
IE52979B1 (en) 1988-04-27
JPS6262457B2 (enExample) 1987-12-26
NL8006668A (nl) 1982-07-01
US4381957A (en) 1983-05-03

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