JPS57113337A - Semiconductor transducer - Google Patents

Semiconductor transducer

Info

Publication number
JPS57113337A
JPS57113337A JP34981A JP34981A JPS57113337A JP S57113337 A JPS57113337 A JP S57113337A JP 34981 A JP34981 A JP 34981A JP 34981 A JP34981 A JP 34981A JP S57113337 A JPS57113337 A JP S57113337A
Authority
JP
Japan
Prior art keywords
bridge circuit
circuit
resistance
excitation
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34981A
Other languages
Japanese (ja)
Inventor
Takashi Kugaya
Tsutomu Okayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP34981A priority Critical patent/JPS57113337A/en
Publication of JPS57113337A publication Critical patent/JPS57113337A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means

Abstract

PURPOSE:To ensure a better linearity against extensive tempeature changes by forming a correction resistance at a strain starting section of a semiconductor diaphragm with a bridge circuit using a gauge resistance formed therein. CONSTITUTION:Gauge resistances Rg1-Rg4 are formed in a strain starting section of a semiconductor diaphragm made of n type silicon single crystal by diffusion technique and compose a bridge circuit 1. The output e2 of the bridge circuit 1 is a signal as quantity of electricity to which a physical quantity is converted. An excitation circuit 2 is provided to excite the bridge circuit 1 with an exciting current IS with one end of the bridge circuit 1 being connected to one end of an excitation power source EO while the other thereof being connected to the collector of a transistor 22. A reference resistance RS in the excitation circuit 2 is composed of a series circuit of a temperature compensation thermistor and a fixed resistance. The exciting current IS is controlled with a transistor 22 based on a reference power source ES.
JP34981A 1981-01-07 1981-01-07 Semiconductor transducer Pending JPS57113337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34981A JPS57113337A (en) 1981-01-07 1981-01-07 Semiconductor transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34981A JPS57113337A (en) 1981-01-07 1981-01-07 Semiconductor transducer

Publications (1)

Publication Number Publication Date
JPS57113337A true JPS57113337A (en) 1982-07-14

Family

ID=11471361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34981A Pending JPS57113337A (en) 1981-01-07 1981-01-07 Semiconductor transducer

Country Status (1)

Country Link
JP (1) JPS57113337A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184819A (en) * 1983-04-06 1984-10-20 Hitachi Ltd Semiconductor pressure sensor
JPS63210636A (en) * 1987-02-26 1988-09-01 Nec Corp Detection circuit of semiconductor sensor
JPS63210635A (en) * 1987-02-26 1988-09-01 Nec Corp Detection circuit of semiconductor sensor
JPS63210637A (en) * 1987-02-26 1988-09-01 Nec Corp Detection circuit of semiconductor sensor
JPS63210634A (en) * 1987-02-26 1988-09-01 Nec Corp Detection circuit of semiconductor sensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184819A (en) * 1983-04-06 1984-10-20 Hitachi Ltd Semiconductor pressure sensor
JPH0425488B2 (en) * 1983-04-06 1992-05-01 Hitachi Ltd
JPS63210636A (en) * 1987-02-26 1988-09-01 Nec Corp Detection circuit of semiconductor sensor
JPS63210635A (en) * 1987-02-26 1988-09-01 Nec Corp Detection circuit of semiconductor sensor
JPS63210637A (en) * 1987-02-26 1988-09-01 Nec Corp Detection circuit of semiconductor sensor
JPS63210634A (en) * 1987-02-26 1988-09-01 Nec Corp Detection circuit of semiconductor sensor

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