JPS57111299A - Method of growing silicon crystal body - Google Patents

Method of growing silicon crystal body

Info

Publication number
JPS57111299A
JPS57111299A JP3448381A JP3448381A JPS57111299A JP S57111299 A JPS57111299 A JP S57111299A JP 3448381 A JP3448381 A JP 3448381A JP 3448381 A JP3448381 A JP 3448381A JP S57111299 A JPS57111299 A JP S57111299A
Authority
JP
Japan
Prior art keywords
silicon crystal
crystal body
growing silicon
growing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3448381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329756B2 (https=
Inventor
Uorudo Furitsutsu
Pii Keerujiyusu Jiyurisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Tyco Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Tyco Solar Energy Corp filed Critical Mobil Tyco Solar Energy Corp
Publication of JPS57111299A publication Critical patent/JPS57111299A/ja
Publication of JPH0329756B2 publication Critical patent/JPH0329756B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3448381A 1980-03-10 1981-03-10 Method of growing silicon crystal body Granted JPS57111299A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12907580A 1980-03-10 1980-03-10

Publications (2)

Publication Number Publication Date
JPS57111299A true JPS57111299A (en) 1982-07-10
JPH0329756B2 JPH0329756B2 (https=) 1991-04-25

Family

ID=22438347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3448381A Granted JPS57111299A (en) 1980-03-10 1981-03-10 Method of growing silicon crystal body

Country Status (2)

Country Link
JP (1) JPS57111299A (https=)
IN (1) IN154501B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010529942A (ja) * 2007-06-14 2010-09-02 エバーグリーン ソーラー， インコーポレイテッド リボン結晶引き上げ炉のための取り外し可能熱制御

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5393184A (en) * 1977-01-24 1978-08-15 Mobil Tyco Solar Energy Corp Apparatus and method for growing single crystal from melt
JPS5437678A (en) * 1977-08-31 1979-03-20 Osaka Titanium Method of pulling semiconductor silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5393184A (en) * 1977-01-24 1978-08-15 Mobil Tyco Solar Energy Corp Apparatus and method for growing single crystal from melt
JPS5437678A (en) * 1977-08-31 1979-03-20 Osaka Titanium Method of pulling semiconductor silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010529942A (ja) * 2007-06-14 2010-09-02 エバーグリーン ソーラー， インコーポレイテッド リボン結晶引き上げ炉のための取り外し可能熱制御

Also Published As

Publication number Publication date
IN154501B (https=) 1984-11-03
JPH0329756B2 (https=) 1991-04-25

Similar Documents

Publication Publication Date Title
GB2078480B (en) Method and apparatus for the growing of seedlings
JPS5751112A (en) Silicon crystal body continuous manufacture and continuous growth device
DE3175577D1 (en) Method of converting areas of semiconductor material into single crystal areas
GB8619455D0 (en) Single crystal ingots of silicon
JPS5350074A (en) Apparatus for growing silicon single crystal of webbform or sheettform
JPS5727996A (en) Manufacture of single crystal
DE3169596D1 (en) Method for manufacture of silicon carbide
GB2084122B (en) Preparation of silicon from quartz and carbon
DE3377874D1 (en) Method of growing silicon crystals by the czochralski method
GB8329652D0 (en) Set of growing cells
JPS5723215A (en) Method of producing thin crystal
IL62216A0 (en) Control of atmosphere surrounding crystal growth zone
JPS56114688A (en) Method of holding body
IL68523A0 (en) Method of growing trichoderma
GB2135594B (en) Ribbon growth of crystals
JPS53144819A (en) Method of purifying silicon
GB2084483B (en) Method of manufacturing single crystals
JPS5717498A (en) Manufacture of plate-like,ribbon-like or foil-like silicon crystal raw body
DE3365149D1 (en) Pulling method of single crystals
GB2170043B (en) Apparatus for the growth of semiconductor crystals
GB2089777B (en) Process for heat-treating single crystal of tungstate
JPS569298A (en) Method of growing silicon crystal
JPS57111299A (en) Method of growing silicon crystal body
GB8323225D0 (en) Controlling diameter of growing single crystal
GB2084978B (en) Growing silicon ingots