JPS57111056A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57111056A
JPS57111056A JP55188381A JP18838180A JPS57111056A JP S57111056 A JPS57111056 A JP S57111056A JP 55188381 A JP55188381 A JP 55188381A JP 18838180 A JP18838180 A JP 18838180A JP S57111056 A JPS57111056 A JP S57111056A
Authority
JP
Japan
Prior art keywords
lead out
leads
electrodes
pinched
attract
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55188381A
Other languages
Japanese (ja)
Inventor
Jiro Kakehi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP55188381A priority Critical patent/JPS57111056A/en
Publication of JPS57111056A publication Critical patent/JPS57111056A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To perform fixing of leads of a semiconductor device enabling to attract and hold a magnet by a method wherein lead out leads consisting of a ferromagnetic body covered with a metal having favorable heat radiability and electrodes are soldered to form slug leads, and a pellet is pinched between them and soldering is performed to fix. CONSTITUTION:The Si pellet 13 having a cathode electrode 17, an anode electrode 18 forming contact is pinched and held from both sides with the lead out electrodes 15, 16. The outside lead out leads 21, 22 are formed by making ferromagnetic Fe as a core 23, and covering the surface thereof with a clad film of a Cu thin film 24 having favorable heat radiability. The outside lead out members are fixed to the lead out electrodes through an Ag solder material 25. Accordingly the outside lead out leads being able to attract and hold the magnet can be obtained at low cost and moreover mass production can be attained.
JP55188381A 1980-12-26 1980-12-26 Semiconductor device Pending JPS57111056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55188381A JPS57111056A (en) 1980-12-26 1980-12-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188381A JPS57111056A (en) 1980-12-26 1980-12-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57111056A true JPS57111056A (en) 1982-07-10

Family

ID=16222620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188381A Pending JPS57111056A (en) 1980-12-26 1980-12-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57111056A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778764A (en) * 1993-10-25 1995-03-20 Semiconductor Energy Lab Co Ltd Plasma vapor reaction method
JPH0794417A (en) * 1993-01-13 1995-04-07 Semiconductor Energy Lab Co Ltd Plasma vapor phase reactor
JPH07201764A (en) * 1994-12-26 1995-08-04 Semiconductor Energy Lab Co Ltd Plasma vapor phase reaction
JPH07201763A (en) * 1994-12-26 1995-08-04 Semiconductor Energy Lab Co Ltd Plasma reaction

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794417A (en) * 1993-01-13 1995-04-07 Semiconductor Energy Lab Co Ltd Plasma vapor phase reactor
JP2648684B2 (en) * 1993-01-13 1997-09-03 株式会社 半導体エネルギー研究所 Plasma gas phase reactor
JPH0778764A (en) * 1993-10-25 1995-03-20 Semiconductor Energy Lab Co Ltd Plasma vapor reaction method
JP2670561B2 (en) * 1993-10-25 1997-10-29 株式会社 半導体エネルギー研究所 Film formation method by plasma vapor phase reaction
JPH07201764A (en) * 1994-12-26 1995-08-04 Semiconductor Energy Lab Co Ltd Plasma vapor phase reaction
JPH07201763A (en) * 1994-12-26 1995-08-04 Semiconductor Energy Lab Co Ltd Plasma reaction

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